Semiconductor optical device and manufacturing method thereof
View Patent ↗To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer ( 306 ) for emitting light through recombination of an electron and a hole; a diffraction grating ( 309 ) having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer ( 311 ) including at least Al, made of In and group-V compound, and formed on the diffraction grating; and a second semiconductor layer ( 307 ) including Mg, made of In and group-V compound, and formed on the first semiconductor layer ( 311 ).
1. A semiconductor optical device, comprising:
a substrate made of InP;
an active layer for emitting light through recombination of an electron and a hole, the active layer being formed over the substrate;
a diffraction grating having a pitch defined in accordance with an output wavelength of the light emitted;
a first semiconductor layer including at least Al, made of In and a group-V compound, and formed in direct physical contact with a top of the diffraction grating; and
a second semiconductor layer including Mg, not including Al, made of InP, and formed in direct physical contact with a top of the first semiconductor layer,
wherein the first semiconductor layer is undoped and has a thickness between 0.3 nm and 5 nm inclusive, and the second semiconductor layer is a cladding layer.
2. The semiconductor optical device according to claim 1 , wherein a concentration of Al in the first semiconductor layer is between 1×10 16 and 1×10 20 cm −3 inclusive.
3. A manufacturing method of a semiconductor optical device, the method comprising:
a substrate preparing step of preparing a substrate made of InP;
an active layer forming step of forming an active layer over the substrate for emitting light through recombination of an electron and a hole;
a diffraction grating forming step of forming a diffraction grating having a pitch defined in accordance with an output wavelength of the light emitted;
a first semiconductor layer forming step of forming a first semiconductor layer including at least Al, made of In and a group-V compound, and formed in direct physical contact with a top of the diffraction grating; and
a second semiconductor layer forming step of forming a second semiconductor layer including Mg, not including Al, made of InP, and formed in direct physical contact with a top of the first semiconductor layer,
wherein the first semiconductor layer is undoped and has a thickness between 0.3 nm and 5 nm inclusive and the second semiconductor layer is a cladding layer.
4. The manufacturing method of a semiconductor optical device according to claim 3 , wherein a concentration of Al in the first semiconductor layer of the semiconductor optical device is between 1×10 16 and 1×10 20 cm −3 inclusive.