IP Library › Granted Patent US 9,818,734

Granted Patent B2

US 9,818,734 · App. 14/624,136 · Granted Nov 14, 2017

Semiconductor device and method of forming build-up interconnect structures over a temporary substrate

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Quick Facts

Patent No.: US 9,818,734
App. No.: 14/624,136
Filed: Feb 17, 2015
Granted: Nov 14, 2017
Kind: B2
Examiner: TRINH, MICHAEL MANH
Art Unit: 2822
USPC: 438/112

External Links

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Abstract

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

Claims (54)

1. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate;

disposing a first semiconductor die over the first interconnect structure;

disposing the substrate over a carrier with the first semiconductor die between the carrier and substrate;

depositing an encapsulant over the carrier, first semiconductor die, and substrate;

forming a second interconnect structure over the encapsulant and first semiconductor die with the first semiconductor die between the first interconnect structure and second interconnect structure; and

removing the substrate to expose the first interconnect structure and encapsulant after forming the second interconnect structure.

2. The method of claim 1 , further including forming a conductive column over the substrate with the first semiconductor die within a height of the conductive column.

3. The method of claim 2 , wherein the height of the conductive column is less than a height of the first semiconductor die.

4. The method of claim 1 , further including forming a shielding layer within the first interconnect structure or second interconnect structure.

5. The method of claim 1 , wherein forming the second interconnect structure includes depositing an insulating layer directly on the encapsulant.

6. The method of claim 1 , wherein removing the substrate includes using a grinding operation to completely remove the substrate.

7. The method of claim 1 , further including singulating the substrate before disposing the substrate over the carrier.

8. The method of claim 2 , wherein the conductive column extends from the first interconnect structure to the second interconnect structure.

9. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate;

disposing a semiconductor die over the first interconnect structure;

singulating the substrate;

forming a second interconnect structure over the semiconductor die with the semiconductor die between the first interconnect structure and second interconnect structure; and

removing the substrate to expose the first interconnect structure after forming the second interconnect structure over the semiconductor die.

10. The method of claim 9 , further including forming a vertical interconnect structure over the substrate.

11. The method of claim 9 , wherein forming the first interconnect structure includes:

forming an insulating layer over the substrate; and

forming a conductive layer over the insulating layer.

12. The method of claim 11 , further including removing a portion of the insulating layer after removing the substrate.

13. The method of claim 9 , further including forming a grounding layer or shielding layer within the first interconnect structure or second interconnect structure.

14. The method of claim 9 , further including disposing an encapsulant over a side surface of the first interconnect structure.

15. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate;

disposing a first semiconductor die over the first interconnect structure;

disposing the substrate over a carrier with the first semiconductor die between the substrate and carrier;

depositing an encapsulant around the first semiconductor die and substrate between the substrate and carrier; and

forming a second interconnect structure on the encapsulant.

16. The method of claim 15 , further including removing the substrate after forming the second interconnect structure.

17. The method of claim 15 , wherein the substrate includes silicon.

18. The method of claim 15 , further including forming a vertical interconnect structure over the first interconnect structure.

19. The method of claim 15 , wherein forming the first interconnect structure includes:

forming an insulating layer over the substrate; and

forming a conductive layer over the insulating layer.

20. The method of claim 19 , further including removing a portion of the insulating layer after removing the substrate.

21. The method of claim 15 , further including disposing a second semiconductor die over the first interconnect structure.

22. A semiconductor device, comprising:

a substrate;

a first interconnect structure formed on a first surface of the substrate;

a first semiconductor die disposed over the first interconnect structure with an active surface of the first semiconductor die oriented away from the substrate;

an encapsulant disposed over the first semiconductor die, wherein the encapsulant covers the first surface of the substrate and a second surface of the substrate opposite the first surface;

a second interconnect structure formed over the encapsulant with the first semiconductor die between the first interconnect structure and second interconnect structure; and

a conductive pillar disposed in the encapsulant outside a footprint of the first semiconductor die and extending from the first interconnect structure to the second interconnect structure.

23. The semiconductor device of claim 22 , further including a second semiconductor die disposed over the first interconnect structure.

24. The semiconductor device of claim 22 , wherein the substrate includes silicon.

25. The semiconductor device of claim 22 , wherein the second interconnect structure contacts a contact pad of the first semiconductor die and the conductive pillar.