Method for measuring gas concentrations based on sensor response times

1. A method for measuring hydrogen concentration in a gas comprising:

exposing a gas sensor to the gas, the gas sensor having an electrical characteristic that varies as a function of concentration of the gas;

alternately controlling the temperature of the gas sensor between a first temperature and a second temperature while the gas sensor is exposed to the gas, wherein the temperature of the gas sensor remains at the first temperature over a first period of time, transitions from the first temperature to the second temperature over a second period of time, remains at the second temperature over a third period of time, and transitions from the second temperature to the first temperature over a fourth period of time, wherein in the presence of the hydrogen, the electrical characteristic of the gas sensor exhibits a spiking transient in response to the transition from the first temperature to the second temperature of the gas sensor, wherein the spiking transient returns to a steady state during the third period of time, wherein the spiking transient is an overshoot of the steady state;

continuously monitoring the electrical characteristic of the gas sensor during the second period of time; and

calculating the hydrogen concentration as a function of the spiking transient in the electrical characteristic of the gas sensor measured in response to the temperature transitioning from the first temperature to the second temperature.

2. The method of claim 1 wherein the electrical characteristic is resistance.

3. The method of claim 1 wherein the electrical characteristic is capacitance.

4. The method of claim 1 wherein exposing the gas sensor to the gas comprises exposing a thin-film gas sensor formed from an alloy of Pd to the gas.

5. The method of claim 4 wherein exposing the thin-film gas sensor formed from the alloy of Pd to the gas comprises exposing a PdNi thin-film gas sensor to the gas.

6. The method of claim 1 wherein exposing the gas sensor to the gas comprises exposing a PdAg thin-film gas sensor to the gas.

7. The method of claim 1 , further comprising continuously monitoring the electrical characteristic of the gas sensor in response to the transition from the second temperature to the first temperature, and calculating the hydrogen concentration as a function of a second spiking transient in the electrical characteristics of the gas sensor measured in response to the temperature transitioning from the second temperature to the first temperature.

8. A method for measuring element concentration in a gas, comprising:

exposing a gas sensor to the gas, the gas sensor having an electrical characteristic that varies as a function of concentration of the gas;

alternately controlling the temperature of the gas sensor by staying at a first temperature for a first period of time, transitioning to a second temperature over a second period of time, staying at the second temperature for a third period of time, and then transitioning to the first temperature for a fourth period of time while the gas sensor is exposed to the gas;

continuously monitoring the electrical characteristic of the gas sensor during the first, second, third and fourth periods of time, wherein the electrical characteristic exhibits a steady state at the second temperature, wherein in the presence of the hydrogen, the electrical characteristic of the gas sensor exhibits a spiking transient in response to transitions in the temperature of the gas sensor, wherein the spiking transient is an overshoot of the steady state; and

calculating the gas concentration as a function of the spiking transient in the electrical characteristic of the gas sensor.

9. The method of claim 8 wherein the electrical characteristic is resistance.

10. The method of claim 8 wherein the electrical characteristic is capacitance.

11. The method of claim 8 wherein exposing the gas sensor to the gas comprises exposing a thin-film gas sensor formed from an alloy of Pd to the gas.

12. The method of claim 11 wherein exposing the thin-film gas sensor formed from an alloy of Pd to the gas comprises exposing a PdNi thin-film gas sensor to the gas.

13. The method of claim 8 wherein exposing the gas sensor to the gas comprises exposing a PdAg thin-film gas sensor to the gas.

14. The method of claim 8 , wherein the gas concentration is calculated based on a slope of the spiking transient of the electrical characteristic as the spiking transient returns to the steady state.

15. The method of claim 14 , further comprising:

calculating a drift in the gas sensor dynamically as the temperature of the gas sensor changes; and

accounting for the drift in calculating the hydrogen concentration.

16. The method of claim 15 , wherein accounting for the drift comprises dynamically calculating a proportionality constant during the change in temperature.

17. A method for measuring hydrogen concentration in a gas, comprising:

exposing a gas sensor to the gas, the gas sensor having an electrical characteristic that varies as a function of concentration of the gas and a temperature of the gas sensor;

applying an electrical signal to control the temperature of the gas sensor over a period of time, while the gas sensor is exposed to the gas, the electrical signal being applied in the form of a repeating waveform;

continuously measuring the electrical characteristic of the gas sensor during the time of the repeating waveform; and

calculating the hydrogen concentration as a function of a spiking transient electrical characteristic of the sensor corresponding to the repeating waveform.

18. The method of claim 17 wherein the electrical characteristic is resistance.

19. The method of claim 17 wherein the electrical characteristic is capacitance.

20. The method of claim 17 , wherein exposing the gas sensor to the gas comprises exposing a thin-film gas sensor formed from an alloy of Pd to the gas.

21. The method of claim 20 wherein exposing the thin-film gas sensor formed from an alloy of Pd to the gas comprises exposing a PdNi thin-film gas sensor to the gas.

22. The method of claim 17 wherein exposing the gas sensor to the gas comprises exposing a PdAg thin-film gas sensor to the gas.

23. The method of claim 17 , wherein the function for calculating gas concentration is based on a characteristic of the waveform selected from the group consisting of a phase and an amplitude.