Capacitive micro-machined transducer and method of manufacturing the same
The present invention relates to a method of manufacturing a capacitive micro-machined transducer ( 100 ), in particular a CMUT, the method comprising depositing a first electrode layer ( 10 ) on a substrate ( 1 ), depositing a first dielectric film ( 20 ) on the first electrode layer ( 10 ), depositing a sacrificial layer ( 30 ) on the first dielectric film ( 20 ), the sacrificial layer ( 30 ) being removable for forming a cavity ( 35 ) of the transducer, depositing a second dielectric film ( 40 ) on the sacrificial layer ( 30 ), and depositing a second electrode layer ( 50 ) on the second dielectric film ( 40 ), wherein the first dielectric film ( 20 ) and/or the second dielectric film ( 40 ) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer ( 100 ), in particular a CMUT, manufactured by such method.
1. A capacitive micromachined ultrasound transducer, comprising:
a first electrode layer on a substrate, wherein the first electrode layer comprises a first non-metal conductive material;
a first dielectric layer on the first electrode layer, wherein the first dielectric layer comprises a first layer comprising an oxide, a second layer comprising an oxide, and a high-k material layer having a high dielectric constant, wherein the high-k material layer is sandwiched between the first oxide layer and the second oxide layer, and wherein the first dielectric layer comprises a residual from atomic layer deposition;
a membrane above the first dielectric layer, wherein a cavity is formed between the first dielectric layer and the membrane; and
a second electrode layer formed on the membrane, wherein the second electrode layer comprises a second non-metal conductive material, and wherein the transducer is configured to be coupled to a voltage source that is configured to apply a voltage such that during operation the transducer is in a collapsed mode.
2. The capacitive micromachined ultrasound transducer of claim 1 , wherein the high dielectric constant is between 8 and 9 or between 12 and 27.
3. The capacitive micromachined ultrasound transducer of claim 1 , wherein the high-k material layer having the high dielectric constant comprises Aluminum Oxide or Hafnium Oxide.
4. The capacitive micromachined ultrasound transducer of claim 1 , wherein the membrane comprises a second dielectric layer, wherein the second dielectric layer includes another layer having a high dielectric constant sandwiched between first and second layers comprising an oxide.
5. The capacitive micromachined ultrasound transducer of claim 1 , wherein the first dielectric layer has a thickness of less than 100 nm.
6. The capacitive micromachined ultrasound transducer of claim 1 , wherein the layer having a high dielectric constant has a thickness of less than 100 nm.
7. The capacitive micromachined ultrasound transducer of claim 1 , wherein the residual from atomic layer deposition comprises carbon or chlorine.
8. The capacitive micromachined ultrasound transducer of claim 1 , having a circular, square or hexagonal shape.
9. The capacitive micromachined ultrasound transducer of claim 1 , comprising a single cell.
10. The capacitive micromachined ultrasound transducer of claim 1 , comprising an array of cells.
11. The capacitive micromachined ultrasound transducer of claim 1 , wherein at least one of the first non-metal conductive material and the second non-metal conductive material includes at least one of titanium nitride, tantalum nitride, iridium oxide, indium tin oxide, strontium ruthenate, TaCN, and LaNiO 3 .
12. The capacitive micromachined ultrasound transducer of claim 1 , wherein at least one of the first non-metal conductive material and the second non-metal conductive material includes polysilicon.