Contacts for an N-type gallium and nitrogen substrate for optical devices
View Patent ↗A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
1. A method for fabricating light emitting diode (LED) devices, the method comprising:
providing a gallium and nitrogen containing substrate member comprising a backside surface and a front side surface, the front side surface comprising an n-type material overlying the substrate member, an active region overlying the n-type material, and a p-type material overlying the active region;
subjecting the backside surface to a polishing process, causing the backside surface to be characterized by a surface roughness;
subjecting the roughened backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface to provide an etched backside surface;
treating the etched backside surface to a plasma species to provide a plasma-exposed backside surface;
subjecting the plasma-exposed backside surface to an acid surface treatment to provide a surface-treated backside; and
forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
2. The method of claim 1 , wherein the backside surface is characterized by a nitrogen face of a c-plane and an n-type GaN with a carrier concentration from 1E15/cm 3 to 1E20/cm 3 ; wherein the surface roughness ranges from about 0.3 nm to 200 nm.
3. The method of claim 1 , wherein the polishing process comprises using a diamond slurry mixture having a particle size ranging from 0.05 μm to 5 μm.
4. The method of claim 1 , wherein each of the plurality of pyramid-like structures is characterized by a height from 20 nm to 1000 nm.
5. The method of claim 1 , wherein the anisotropic etching process comprises using a solution comprising silicic acid and potassium hydroxide.
6. The method of claim 5 , wherein the solution comprises 0% to 20% by weight of silicic acid hydrate, and 3% to 45% by weight potassium hydroxide in water.
7. The method of claim 5 , wherein the anisotropic etching process comprises immersing the backside surface in the solution for at least 1 minute.
8. The method of claim 5 , wherein the solution is at a temperature between 0° C. and 100° C.
9. The method of claim 1 , wherein the plasma species comprises a silicon species and a chlorine species derived from a silicon tetrachloride gas source.
10. The method of claim 1 , wherein the surface treatment comprises immersing the backside surface in HCl from 1 minute to 10 minutes.
11. The method of claim 1 , further comprising subjecting the plurality of LED devices with the contact material to a thermal treatment process to form an ohmic contact between each of the plurality of LED devices and the contact material.
12. The method of claim 1 , further comprising separating each of the plurality of LED devices.