Contact layer for magnetic tunnel junction element and manufacturing method thereof
View Patent ↗According to one embodiment, a semiconductor memory device includes a magnetic tunnel junction (MTJ) element includes a first magnetic layer, a second magnetic layer and a non-magnetic layer between the first and second magnetic layers, a contact layer formed underneath the MTJ element, the contact layer being formed of a first material, and a first layer formed around the contact layer, wherein the first layer in contact with a side surface of the contact layer, has a first width extending parallel to a stacking direction of the MTJ element, and a second width extending perpendicularly to the direction of extension of the first width, the second width being less than the first width.
1. A semiconductor memory device comprising:
a magnetic tunnel junction (MTJ) element comprising a first magnetic layer, a second magnetic layer and a non-magnetic layer between the first and second magnetic layers;
a contact layer formed underneath the MTJ element, the contact layer being formed of a first material and comprising an upper portion and a lower portion, wherein a size of the upper portion in a direction parallel to a layer surface of the MTJ element is smaller than a size of the lower portion in the direction parallel to the layer surface of the MTJ element;
a first layer formed around the contact layer and in contact with a side surface of the upper portion of the contact layer and an upper surface of the lower portion of the contact layer; and
a stopper layer provided between the contact layer and the first layer,
wherein the first layer in contact with the side surface of the upper portion of the contact layer, has a first width extending parallel to a stacking direction of the MTJ element, and a second width extending perpendicularly to the direction of extension of the first width, and the second width is less than the first width.
2. The device according to claim 1 , wherein the first material comprises one of Ta, Ti, Al, Si, Hf and W.
3. The device according to claim 1 , wherein the first layer is an oxide of the first material.
4. The device according to claim 1 , wherein the first layer is a nitride of the first material.
5. The device according to claim 1 , wherein a level of a surface of the first layer is equal to a level of a surface of the contact layer.
6. The device according to claim 1 , wherein the size of the surface of the upper portion of the contact layer in the direction parallel to the layer surface of the MTJ element is smaller than a size of a bottom surface of the MTJ element.
7. The device according to claim 6 , wherein the bottom surface of the MTJ element is formed on the surface of the contact layer and the surface of the first layer.
8. The device according to claim 1 , wherein the first layer is formed on a portion other than the bottom surface of the MTJ element.
9. The device according to claim 1 , wherein the stopper layer is a nitride containing the first material.
10. A semiconductor memory device comprising:
a transistor formed within a semiconductor substrate, the transistor comprising a first diffusion layer, a second diffusion layer and a gate electrode;
a contact layer formed on the first diffusion layer of the transistor, the contact layer being formed of a first material and comprising an upper portion and a lower portion;
a first layer formed around the contact layer and in contact with a side surface of the upper portion of the contact layer and an upper surface of the lower portion of the contact layer;
a magnetic tunnel junction (MTJ) element formed at least on the contact layer; and
a stopper layer provided between the contact layer and the first layer,
wherein:
a size of the upper portion of the contact layer in a direction parallel to a layer surface of the MTJ element is smaller than a size of the lower portion of the contact layer in the direction parallel to the layer surface of the MTJ element, and
the first layer in contact with the side surface of the upper portion of the contact layer, has a first width extending parallel to a stacking direction of the MTJ element, and a second width extending perpendicularly to the direction of extension of the first width, and the second width is less than the first width.
11. The device according to claim 10 , wherein the first material comprises one of Ta, Ti, Al, Si, Zr, Hf and W.
12. The device according to claim 10 , wherein the first layer is an oxide of the first material.
13. The device according to claim 10 , wherein the first layer is a nitride of the first material.
14. The device according to claim 10 , wherein a level of a surface of the first layer is equal to a level of a surface of the contact layer.
15. The device according to claim 10 , wherein the size of the surface of the upper portion of the contact layer in the direction parallel to the layer surface of the MTJ element is smaller than a size of a bottom surface of the MTJ element.
16. The device according to claim 15 , wherein the bottom surface of the MTJ element is formed on the surface of the contact layer and the surface of the first layer.
17. The device according to claim 10 , wherein the first layer is formed on a portion other than the bottom surface of the MTJ element.
18. The device according to claim 10 , wherein the stopper layer is a nitride containing the first material.
19. A method of manufacturing a semiconductor memory device, the method comprising:
forming a transistor within a semiconductor substrate, the transistor comprising a first diffusion layer, a second diffusion layer and a gate electrode;
forming an interlayer insulator layer on the semiconductor substrate;
forming a contact layer in the interlayer insulator layer on the first diffusion layer of the transistor, the contact layer being formed of a first material;
etching the interlayer insulator layer to expose a portion of the contact layer;
forming a first layer around the contact layer by oxidizing or nitriding the exposed portion of the contact layer; and
forming a magnetic tunnel junction (MTJ) element on the contact layer,
wherein a size of an upper portion of the contact layer in a direction parallel to a layer surface of the MTJ becomes smaller than a size of a lower portion of the contact layer by the oxidizing or the nitriding.
20. The method of claim 19 , wherein the first layer is an oxide of the first material.
21. The method of claim 19 , wherein the size of the surface of the upper portion of the contact layer in the direction parallel to the layer surface of the MTJ element is smaller than a size of a bottom surface of the MTJ element.
22. The method of claim 21 , wherein the bottom surface of the MTJ element is formed on the surface of the contact layer and the surface of the first layer.
23. The method of claim 19 , further comprising:
forming a contact hole in the interlayer insulator layer;
forming a portion of the contact layer in the contact hole;
forming a stopper layer on a portion of the contact layer; and
forming a remaining portion of the contact layer on the stopper layer.