Semiconductor device and method of manufacturing the semiconductor device
View Patent ↗According to an embodiment, a manufacturing method of a semiconductor device includes forming, on a film to be processed, a plurality of first core material patterns and a plurality of second core material patterns. Each of the second core material patterns is drawn from an end portion of the corresponding first core material pattern. The manufacturing method includes forming an opening pattern having one or a plurality of openings in the second core material pattern so that a first distance and a second distance are less than a predetermined distance. The first distance is a distance between an edge of the second core material pattern at a side of an adjacent first core material pattern and the opening pattern. The second distance is a distance between an edge of the second core material pattern at a side of an adjacent second core material pattern and the opening pattern.
1. A semiconductor device comprising:
a pair of wires extending in a first direction with a first interval;
a pair of leading lines, each of the leading lines being drawn from an end portion of the corresponding wire, and the leading lines extending, with a second interval wider than the first interval, in a second direction crossing the first direction;
a dummy pattern provided between the pair of leading lines, an interval between the dummy pattern and the leading line and an interval between the dummy pattern and the wire being less than 100 nm; and
a pair of pads provided between the pair of leading lines at the side of the second direction with respect to the dummy pattern, each of the pads being connected to the corresponding leading line, wherein
the dummy pattern comprises a first dummy pattern and a second dummy pattern arranged in the first direction and separated from each other,
the first dummy pattern is connected to one of the pair of pads in the second direction, and
the second dummy pattern is connected to the other of the pair of pads in the second direction.
2. The semiconductor device according to claim 1 , wherein the first dummy pattern comprises:
a first U-shaped pattern open in the first direction; and
a second U-shaped pattern open in the first direction, and provided at the inner side of the first U-shaped pattern, and
the second dummy pattern comprises:
a third U-shaped pattern, an opening of the third U-shaped pattern facing an opening of the first U-shaped pattern; and
a fourth U-shaped pattern provided at the inner side of the third U-shaped pattern, an opening of the fourth U-shaped pattern facing an opening of the second U-shaped pattern, and
an interval between the first U-shaped pattern and the second U-shaped pattern, and an interval between the third U-shaped pattern and the fourth U-shaped pattern are the first interval.
3. The semiconductor device according to claim 2 , wherein the dummy pattern further comprising a third dummy pattern provided between the first dummy pattern and the wire, and between the second dummy pattern and the wire,
the third dummy pattern comprises:
a loop-shaped first loop pattern; and
a loop-shaped second loop pattern provided at the inner side of the first loop pattern, and
an interval between the first loop pattern and the second loop pattern is the first interval.
4. The semiconductor device according to claim 2 , wherein the dummy pattern further comprises:
a third dummy pattern provided between the first dummy pattern and the wire; and
a fourth dummy pattern provided between the second dummy pattern and the wire, and
each of the third dummy pattern and the fourth dummy pattern comprises:
a loop-shaped first loop pattern; and
a loop-shaped second loop pattern provided at the inner-side of the first loop pattern, and
an interval between the first loop pattern and the second loop pattern is the first interval.
5. The semiconductor device according to claim 1 , wherein each of the first dummy pattern and the second dummy pattern comprises:
a loop-shaped first loop pattern; and
a loop-shaped second loop pattern provided at the inner side of the first loop pattern,
wherein an interval between the first loop pattern and the second loop pattern is the first interval.
6. A semiconductor device comprising:
a pair of wires extending in a first direction with a first interval;
a pair of leading lines, each of the leading lines being drawn from an end portion of the corresponding wire, and the leading lines extending, with a second interval wider than the first interval, in a second direction crossing the first direction;
a dummy pattern provided between the pair of leading lines, an interval between the dummy pattern and the leading line and an interval between the dummy pattern and the wire being less than 100 nm; and
a pair of pads provided between the pair of leading lines at the side of the second direction with respect to the dummy pattern, each of the pads being connected to the corresponding leading line, wherein
an interval between the pair of pads is wider than the first interval.