IP Library Granted Patent US 9,799,522
Granted Patent B2
US 9,799,522 · App. 14/632,696 · Granted Oct 24, 2017

Aluminum oxide passivation and damage removal for solar cells

Inventors: Pawan Kapur (Burlingame, CA); Anand Deshpande (Milpitas, CA); Sean M. Seutter (San Jose, CA); Heather Deshazer (Palo Alto, CA); Virendra V. Rana (Los Gatos, CA); Solene Coutant (San Jose, CA); Swaroop Kommera (San Jose, CA); Mehrdad M. Moslehi (Los Altos, CA)
Assignee: OB REALTY, LLC
H01L21/268H01L31/02167H01L31/0682H01L31/1804Y02E10/547Y02P70/521
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Quick Facts
Patent No.
US 9,799,522
App. No.
14/632,696
Granted
Oct 24, 2017
Kind
B2
Abstract

The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions. Laser damage to the solar cell substrate is removed using an etch.

Claims (8)

1. A method for making solar cell, comprising:

depositing an undensified doped laser absorbent aluminum oxide passivation layer on a surface of a solar cell crystalline silicon substrate using atmospheric pressure chemical vapor deposition, wherein the deposition process is performed at a deposition temperature less than 450° C., said undensified doped laser absorbent aluminum oxide passivation layer having a doping opposite said solar cell crystalline silicon substrate;

patterning said undensified doped laser absorbent aluminum oxide passivation layer using laser ablation, wherein said laser ablation has a wavelength in the infrared to ultraviolet range;

etching said solar cell crystalline silicon substrate in said laser ablation pattern and removing a layer from said solar cell crystalline silicon substrate; and

annealing said crystalline silicon solar cell substrate to form diffused solar cell doped regions corresponding to said patterned undensified doped laser absorbent aluminum oxide passivation layer.

2. The method of claim 1 , wherein said doped laser absorbent passivation layer is an metal rich doped laser absorbent passivation layer.

3. The method of claim 1 , wherein said doped laser absorbent passivation aluminum oxide layer has a thickness in the range of 10 to 50 nm.

4. The method of claim 1 , wherein said laser ablation has a pulse width in the range of 1 to 100 nanoseconds.

Assignments (7)
ASSIGNMENT OF LOAN DOCUMENTS Recorded Sep 29, 2017
From: OPUS BANK
To: OB REALTY, LLC
Reel/Frame 044062/0383 →
CHANGE OF NAME Recorded Aug 8, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043482/0710 →
SECURITY INTEREST Recorded Aug 8, 2017
From: SOLEXEL, INC.
To: OPUS BANK
Reel/Frame 043482/0857 →
RECORDATION OF FORECLOSURE OF PATENT PROPERTIES Recorded Aug 8, 2017
From: OB REALTY, LLC
To: OB REALTY, LLC
Reel/Frame 043482/0542 →
CHANGE OF NAME Recorded Jul 28, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043367/0649 →
RECORDATION OF FORECLOSURE OF PATENT PROPERTIES Recorded Jul 27, 2017
From: OB REALTY, LLC
To: OB REALTY, LLC
Reel/Frame 043350/0822 →
CHANGE OF NAME Recorded Jul 26, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043342/0439 →
Continuity (7)
Continuation In Part 14557096 · Dec 1, 2014
Continuation In Part 14488263 · Sep 16, 2014
Provisional Application 61945126 · Feb 26, 2014
Provisional Application 61910271 · Nov 29, 2013
Provisional Application 61878573 · Sep 16, 2013
Provisional Application 61898504 · Nov 1, 2013
Related Publication 20150311378A1 · Oct 29, 2015