EEPROM programming with first and second programming modes
A method of programming an EEPROM, including: a first mode where a writing into cells is performed under a first voltage; and a second mode where the writing is performed under a second voltage smaller than the first one.
1. A method, comprising:
programming an EEPROM, the programming including:
selecting one of first and second programming modes depending on an amount of input data desired to be programmed;
in response to selecting the first programming mode, writing the input data into memory cells of the EEPROM using a first programming voltage;
in response to selecting the second programming mode, writing the input data into the EEPROM using a second programming voltage, smaller than the first programming voltage; and
determining that a given number of programming operations have been performed in the first programming mode, and
limiting programming operations to the second programming mode in response to determining that the given number of programming operations have been performed in the first programming mode.
2. The method of claim 1 , wherein the first and second voltages are greater than a memory read voltage used to read data from the EEPROM.
3. The method of claim 1 , wherein the first and second programming voltages are applied between a bit line and gates of transistors forming the memory cells.
4. The method of claim 1 , comprising limiting programming operations in the first programming mode to a number smaller, by a ratio of at least ten, than a number of possible programming operations in the second programming mode.
5. The method of claim 1 , comprising:
erasing a first portion of the EEPROM in a first erasing mode carried out using a first erase voltage; and
erasing a second portion of the EEPROM in a second erasing mode carried out using a second erase voltage less than the first erase voltage.
6. An EEPROM, comprising;
a memory matrix of EEPROM memory cells; and
a controller configured to:
program an EEPROM using steps including:
selecting one of first and second programming modes depending on an amount of input data desired to be programmed;
in response to selecting the first programming mode, writing the input data into memory cells of the EEPROM using a first programming voltage; and
in response to selecting the second programming mode, writing the input data into the EEPROM using a second programming voltage, smaller than the first programming voltage;
determine that a given number of programming operations have been performed in the first programming mode, and
limit programming operations to the second programming mode in response to determining that the given number of programming operations have been performed in the first programming mode.
7. A system comprising:
an EEPROM, including:
a memory matrix of EEPROM memory cells; and
a controller configured to:
program an EEPROM using steps including:
selecting one of first and second program modes depending on an amount of input data desired to be programmed;
in response to selecting the first programming mode, writing the input data into memory cells of the EEPROM using a first programming voltage; and
in response to selecting the second programming mode, writing the input data into the EEPROM using a second programming voltage, smaller than the first programming voltage;
determine that a given number of programming operations have been performed in the first programming mode, and
limit programming operations to the second programming mode in response to determining that the given number of programming operations have been performed in the first programming mode; and
at least one circuit configured to communicate with the me EEPROM to read data from the memory matrix or write data into the memory matrix.
8. A method, comprising
programming an EEPROM, the programming including:
selecting one of first and second programming modes depending on an amount of input data desired to be programmed;
in response to selecting the first programming mode, writing the input data into memory cells of the EEPROM using a first programming voltage; and
in response to selecting the second programming mode, writing the input data into the EEPROM using a second programming voltage, smaller than the first programming voltage; and
limiting programming operations in the first programming mode to a number smaller, by a ratio of at least ten, than a number of possible programming operations in the second programming mode.
9. The method of claim 8 , wherein the first and second voltages are greater than a memory read voltage used to read data from the EEPROM.
10. The method of claim 8 , wherein the first and second programming voltages are applied between a bit line and gates of transistors forming the memory cells.
11. The method of claim 8 , comprising:
erasing a first portion of the EEPROM in a first erasing mode carried out using a first erase voltage; and
erasing a second portion of the EEPROM in a second erasing mode carried out using a second erase voltage less than the first erase voltage.