Dopant for a hole conductor layer for organic semiconductor components, and use thereof
View Patent ↗The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m 2 ), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.
1. A hole conductor layer for organic electronic components, in which a dopant comprising a mononuclear square-planar transition metal complex comprising a central atom and ligands has been introduced into a hole conductor matrix, and wherein the ligands are selected from the group consisting of acetylacetonate (acac), trifluoroacetylacetonate (tfac), hexafluoroacetylacetonate (hfac), 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate (fod), and 2,2,6,6-tetramethyl-3,5-heptanedionate (dpm).
2. The hole conductor layer according to claim 1 , wherein the central atom comprises a transition metal selected from the group consisting of Cu, Co, Ni, Pd, and Pt.
3. The hole conductor layer according to claim 1 , wherein the hole conductor layer is used in an organic electronic component.
4. An organic electronic component having a doped hole conductor layer, wherein a dopant of the hole doped conductor layer comprises a transition metal complex which is mononuclear and square-planar, and wherein the component comprises an OLEEC.
5. The component according to claim 4 , wherein the component is a self-emitting component.
6. An organic electronic component comprising:
a first electrode layer;
a hole transport layer overlying the first electrode layer, wherein the hole transport layer comprises a doped hole conductor layer, wherein a dopant of the hole doped conductor layer comprises a transition metal complex which is mononuclear and square-planar;
wherein the transition metal complex comprises a central atom and ligands, wherein the ligands are selected from the group consisting of acetylacetonate (acac), trifluoroacetylacetonate (tfac), hexafluoroacetylacetonate (hfac), 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate (fod), and 2,2,6,6-tetramethyl-3,5-heptanedionate (dpm);
an organic layer overlying the hole transport layer;
an electron transport layer overlying the organic layer; and
a second electrode layer overlying the electron transport layer.
7. The component according to claim 6 , wherein the central atom comprises a transition metal selected from the group consisting of Cu, Co, Ni, Pd, and Pt.
8. The component according to claim 6 , wherein the component is a self-emitting component.
9. The component according to claim 6 , wherein the component comprises an organic light emitting diode.
10. An organic electronic component comprising:
a first electrode layer;
a hole transport layer overlying the first electrode layer, wherein the hole transport layer comprises a doped hole conductor layer, wherein a dopant of the hole doped conductor layer comprises a transition metal complex which is mononuclear and square-planar;
an organic layer overlying the hole transport layer, wherein the organic layer comprises an active emitting layer that is configured to emit light upon application of a voltage and wherein the organic layer comprises a layer stack including a red, green and blue emitter;
an electron transport layer overlying the organic layer; and
a second electrode layer overlying the electron transport layer.