β-Ga2O3-based single crystal substrate
A β-Ga 2 O 3 -based single crystal substrate includes an average dislocation density of less than 7.31×10 4 cm −2 . The average dislocation density may be not more than 6.14×10 4 cm −2 . The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
1. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising:
an average dislocation density on the main surface of not less than 7.52×10 3 cm −2 and less than 7.31×10 4 cm −2 ,
wherein the substrate is free from any twinned crystal, and
wherein the substrate has a diameter of not less than 2 inches.
2. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the average dislocation density is not more than 6.14×10 4 cm −2 .
3. The β-Ga 2 O 3 -based single crystal substrate according to claim 2 , wherein a plane orientation of the main surface is (−201), (101) or (001).
4. The β-Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein a plane orientation of the main surface is (−201), (101) or (001).
5. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising:
an average dislocation density on the main surface of not less than 7.52×10 3 cm −2 and less than 6.14×10 4 cm −2 ,
wherein the substrate further comprises a region free from any twinning plane, and
wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and the main surface.
6. The β-Ga 2 O 3 -based single crystal substrate according to claim 5 , wherein a plane orientation of the main surface is (−201), (101), or (001).
7. A β-Ga 2 O 3 -based single crystal substrate including a main surface parallel to a b-axis, the β-Ga 2 O 3 -based single crystal substrate comprising:
an average dislocation density on the main surface of not less than 6.14×10 4 cm −2 and less than 7.31×10 4 cm −2 ,
wherein the substrate further comprises a region free from any twinning plane, and
wherein the region comprises a maximum width of not less than 2 inches in a direction perpendicular to an intersection line between a twinning plane and a main surface.
8. The β-Ga 2 O 3 -based single crystal substrate according to claim 7 , wherein a plane orientation of the main surface is (−201), (101) or (001).