Manufacturing method of semiconductor device
View Patent ↗A method for manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a plurality of semiconductor elements thereon, a cover layer covering the semiconductor elements, a supporting substrate, and an adhesive layer between the first adhesive layer and the supporting substrate, removing side edge portions of the semiconductor substrate and the adhesive layer, such that a side surface of the cover layer is exposed, forming, in the supporting substrate, fragile portions, the fragile portions extending in a first direction, attaching an adhesive sheet on a surface of the supporting substrate that is opposite to a surface that is in contact with the adhesive layer, and pulling on the adhesive sheet in a second direction different from the first direction, to peel off the supporting substrate and the adhesive layer from the semiconductor substrate having the semiconductor elements.
1. A method for manufacturing a semiconductor device, comprising:
preparing a structure including a semiconductor substrate having a plurality of semiconductor elements thereon, a cover layer covering the semiconductor elements, a supporting substrate, and an adhesive layer between the cover layer and the supporting substrate;
removing side edge portions of the semiconductor substrate and the adhesive layer, such that a side surface of the cover layer is exposed;
forming fragile portions in the supporting substrate, the fragile portions extending in a first direction;
attaching an adhesive sheet on a surface of the supporting substrate that is opposite to a surface that is in contact with the adhesive layer; and
pulling on the adhesive sheet in a second direction different from the first direction, to peel off the supporting substrate and the adhesive layer from the semiconductor substrate having the semiconductor elements.
2. The method according to claim 1 , wherein
the fragile portions are grooves on a surface of the supporting substrate.
3. The method according to claim 2 , wherein the grooves are formed into the surface of the supporting substrate to reach the adhesive layer.
4. The method according to claim 2 , wherein the groove are formed into the surface of the supporting substrate and do not reach the adhesive layer.
5. The method according to claim 1 , wherein the forming of the fragile portions includes
irradiating a surface of the supporting substrate with an electromagnetic wave.
6. The method according to claim 5 , wherein
a wavelength of the electromagnetic wave is smaller than 400 nm.
7. The method according to claim 5 , wherein
a wavelength of the electromagnetic wave is greater than 400 nm.
8. The method according to claim 1 , further comprising:
prior to forming the fragile portions, removing a surface portion of the supporting substrate that is opposite to a surface portion facing the adhesive layer, such that a thickness of the supporting substrate becomes thinner.
9. The method according to claim 8 , further comprising:
prior to removing the surface portion of the supporting substrate, fixing a surface of the semiconductor substrate to a supporting member.
10. The method according to claim 1 , further comprising:
removing a portion of the cover layer remaining on the semiconductor elements after the peeling.
11. The method according to claim 1 , further comprising:
dividing the semiconductor substrate into pieces, the pieces having one of the plurality of semiconductor elements.
12. The method according to claim 11 , wherein
the dividing of the semiconductor substrate is carried out after the peeling.
13. The method according to claim 1 , wherein
the removing of the side edge portions is carried out without removing a side edge portion of the supporting substrate.
14. A method for manufacturing a semiconductor device, comprising:
forming a cover layer on surface of a semiconductor substrate on which a plurality of semiconductor elements is formed;
attaching a supporting substrate to the cover layer with an adhesive layer therebetween;
removing side edge portions of the semiconductor substrate and the adhesive layer, such that a side surface of the cover layer is exposed;
forming fragile portions in the supporting substrate, the fragile portions extending in a first direction;
attaching an adhesive sheet on a surface of the supporting substrate that is opposite to a surface that is in contact with the adhesive layer; and
pulling on the adhesive sheet in a second direction different from the first direction, to peel off the supporting substrate and the adhesive layer from the semiconductor substrate having the semiconductor elements.
15. The method according to claim 14 , wherein
the fragile portions are grooves on a surface of the supporting substrate.
16. The method according to claim 15 , wherein the grooves are formed into the surface of the supporting substrate to reach the adhesive layer.
17. The method according to claim 15 , wherein the groove are formed into the surface of the supporting substrate and do not reach the adhesive layer.
18. The method according to claim 14 , wherein the forming of the fragile portions includes
irradiating a surface of the supporting substrate with an electromagnetic wave.
19. The method according to claim 14 , further comprising:
dividing the semiconductor substrate into pieces, the pieces having one of the plurality of semiconductor elements.
20. The method according to claim 14 , wherein
the removing of the side edge portions is carried out without removing a side edge portion of the supporting substrate.