IP Library Granted Patent US 10,090,273
Granted Patent B2
US 10,090,273 · App. 14/636,168 · Granted Oct 2, 2018

Apparatus and method for manufacturing semiconductor device

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Quick Facts
Patent No.
US 10,090,273
App. No.
14/636,168
Granted
Oct 2, 2018
Kind
B2
Abstract

A manufacturing apparatus of a semiconductor device includes a stage, a head unit configured to face the stage, a driving unit configured to move the head unit towards and away from the stage, a heating unit configured to heat the head unit, and a control unit configured to control the driving unit to move the head unit away from the stage when the heating unit heats the head unit.

Claims (43)

1. A method for manufacturing a semiconductor device, comprising:

placing a semiconductor element that has a plurality of electrodes and attached to a head, on a substrate, such that a plurality of metal bumps is pressed between the electrodes and the substrate with a first force, and then with a second force that is smaller than the first force;

in a state where the metal bumps are pressed with the second force, starting to heat the head such that the metal bumps are melted;

moving the head away from the substrate while the metal bumps are heated; and cooling the head such that the heated metal bumps are cooled and solidified, wherein

while heating the head and moving the head away from the substrate, a distance between the substrate and the semiconductor element is maintained to be constant.

2. The method according to claim 1 , further comprising:

moving the head towards the substrate when the head is being cooled.

3. The method according to claim 2 , wherein

while the head are being cooled and the head is moved towards the substrate, a distance between the substrate and the semiconductor element is maintained to be constant.

4. The method according to claim 1 , wherein placing the semiconductor element on the substrate includes,

moving the head towards the substrate, such that the metal bumps are pressed with the first force, and

moving the head away from the substrate, such that the metal bumps are pressed with the second force.

5. The method according to claim 1 , wherein

during the heating of the head, a temperature of a heating unit is raised to a predetermined value, and

the head is kept being moved away from the substrate after the temperature of the heating unit reaches a predetermined value.

6. The method according to claim 1 , wherein

during the heating of the head, a temperature of a heating unit is raised to a predetermined value, and

during the cooling of the head, the heating unit is turned off.

7. The method according to claim 1 , wherein

during the cooling of the head, an air is flowed through the metal bumps.

8. A method for manufacturing a semiconductor device, comprising:

placing a semiconductor element that has a plurality of electrodes and attached to a head, on a substrate, such that a plurality of metal bumps is pressed between the electrodes and the substrate with a first force;

after the metal bumps are pressed with the first force, moving the semiconductor element away from the substrate such that the metal bumps are pressed between the electrodes and the substrate with a second force that is smaller than the first force;

in a state where the metal bumps are pressed with the second force, starting to heat the head such that the metal bumps are melted;

moving the head away from the substrate when the head is being heated;

cooling the head such that the heated metal bumps are cooled and solidified; and

moving the head towards the substrate when the head is being cooled, wherein

while heating the head and cooling the head, a distance between the substrate and the semiconductor element is maintained to be constant.

9. The method according to claim 1 , wherein

the head starts to be moved away from the substrate at a timing when the head starts to be heated.

10. A method for manufacturing a semiconductor device, comprising:

placing a semiconductor element that has a plurality of electrodes and attached to a head, on a substrate, such that a plurality of metal bumps is pressed between the electrodes and the substrate with a first force, and then with a second force that is smaller than the first force;

in a state where the metal bumps are pressed with the second force, starting to heat the head such that the metal bumps are melted;

moving the head away from the substrate while the metal bumps are heated;

cooling the head such that the heated metal bumps are cooled and solidified; and

moving the head towards the substrate when the head is being cooled wherein

the head starts to be moved towards the substrate at a timing when the head starts to be cooled.

11. The method according to claim 2 , wherein

the head starts to be moved towards the substrate before the head starts to be cooled.

12. The method according to claim 8 , wherein

the head starts to be moved away from the substrate at a timing when the head starts to be heated.

13. The method according to claim 8 , wherein

the head starts to be moved towards the substrate at a timing when the head starts to be cooled.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043194/0647 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2015
From: KOMUTA, NAOYUKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 035847/0315 →