Memory system and method of controlling non-volatile memory

1. A memory system comprising:

a non-volatile memory including one or more memory chips, each of the memory chips including a plurality of pages, each of the pages including a plurality of memory cells, each of the pages being a unit of data reading; and

a controller configured to

group the plurality of memory cells in each of the pages into a plurality of groups, the plurality of groups including a first group and a second group,

in a case of reading data from a first page among the pages,

perform first reading, the first reading including reading data from the first page by using a first operation parameter derived from a threshold voltage distribution of the memory cells of the first group,

perform second reading, the second reading including reading data from the first page by using a second operation parameter derived from a threshold voltage distribution of the memory cells of the second group, the second operation parameter being different from the first operation parameter, and

combine first read data and second read data, and set the combined data as read data read from the first page, the first read data corresponding to data of the memory cells of the first group among data acquired by the first reading, the second read data corresponding to data of the memory cells of the second group among data acquired by the second reading.

2. The memory system according to claim 1 , wherein

the non-volatile memory is a flash memory, and

the first and second operation parameter includes a read voltage.

3. The memory system according to claim 2 , wherein

the memory cells of the second group have different data retention characteristics than the memory cells of the first group.

4. The memory system according to claim 2 , wherein

the memory system is connectable to a host, and

the controller is configured to,

in a case of receiving a read request from the host, read the data from a page in which a physical address is included, the physical address corresponding to a logical address specified by the received read request.

5. A memory system comprising:

a non-volatile memory including one or more memory chips, each of the memory chips including a plurality of pages, each of the pages including a plurality of memory cells, each of the pages being a unit of data reading; and

a controller configured to

group the plurality of memory cells in each of the pages into a plurality of groups, and

perform first reading, the first reading including reading data from a first page among the pages by using a first operation parameter derived from a threshold voltage distribution of the memory cells of the first group among the plurality of groups.

6. The memory system according to claim 5 , wherein the non-volatile memory is a flash memory and the operation parameter includes a read voltage.

7. The memory system according to claim 5 , wherein the first page corresponds to a logical address specified by a read command from a host, and

wherein the controller is configured to

perform the first reading and second reading, the second reading including reading data from the first page by using a second operation parameter derived from a threshold voltage distribution of the memory cells of a second group among the plurality of groups, the second operation parameter being different from the first operation parameter,

combine first read data and second read data, the first read data corresponding to data of the memory cells of the first group among data acquired by the first reading, the second read data corresponding to data of the memory cells of the second group among data acquired by the second reading, and

transmit the combined data to the host.

8. The memory system according to claim 6 , wherein the controller is configured to

perform error correction of the data read by the first reading,

select, when the error correction is unsuccessful, a second group which is estimated to have the greatest number of errors from the plurality of groups, and

perform second reading, the second reading being re-reading from the first page by using a read voltage for the selected second group.

9. The memory system according to claim 8 , wherein the controller is configured to

combine first read data and second read data, and set the combined data as read data read from the first page, the first read data corresponding to data of the memory cells of the first group among data acquired by the first reading, the second read data corresponding to data of the memory cells of the second group among data acquired by the second reading.

10. The memory system according to claim 9 , wherein the controller is configured to select the second group based on a ratio of a number of zero included in the read data to a number of one included in the read data.

11. The memory system according to claim 9 , wherein the controller is configured to select the second group from groups other than the first group.

12. The memory system according to claim 9 , wherein the controller is configured to select the second group based on a result of the error correction.

13. A method of controlling a non-volatile memory including one or more memory chips, each of the memory chips including a plurality of pages, each of the pages including a plurality of memory cells, each of the pages being a unit of data reading, the method comprising:

grouping the plurality of memory cells in each of the pages into a plurality of groups, and

performing first reading, the first reading including reading data from a first page among the pages by using a first operation parameter derived from a threshold voltage distribution of the memory cells of a first group among the plurality of groups.

14. The method according to claim 13 , wherein the non-volatile memory is a flash memory and the operation parameter includes a read voltage.

15. The method according to claim 13 , wherein the first page corresponds to a logical address specified by a read command from a host, and the method further comprising:

performing second reading, the second reading including reading data from the first page by using a second operation parameter derived from a threshold voltage distribution of the memory cells of a second group among the plurality of groups, the second operation parameter being different from the first operation parameter;

combine first read data and second read data, the first read data corresponding to data of the memory cells of the first group among data acquired by the first reading, the second read data corresponding to data of the memory cells of the second group among data acquired by the second reading; and

transmitting combined data to the host.

16. The method according to claim 13 , further comprising:

performing error correction of the data read by the first reading;

selecting, when the error correction is unsuccessful, a second group which is estimated to have the greatest number of errors from the plurality of groups; and

performing second reading, the second reading being re-reading from the first page by using a read voltage for the selected second group.

17. The method according to claim 16 , further comprising:

combining first read data and second read data, the first read data corresponding to data of the memory cells of the first group among data acquired by the first reading, the second read data corresponding to data of the memory cells of the second group among data acquired by the second reading; and

setting the combined data as read data read from the first page.

18. The method according to claim 17 , further comprising selecting the second group based on a ratio of a number of zero included in the read data to a number of one included in the read data.

19. The method according to claim 18 , further comprising selecting the second group based on a result of the error correction.

20. The method according to claim 17 , further comprising selecting the second group from groups other than the first group.