IP Library Granted Patent US 9,373,562
Granted Patent B2
US 9,373,562 · App. 14/641,500 · Granted Jun 21, 2016

Semiconductor device and method of manufacturing semiconductor device

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Quick Facts
Patent No.
US 9,373,562
App. No.
14/641,500
Granted
Jun 21, 2016
Kind
B2
Abstract

A semiconductor device provided herewith includes a semiconductor substrate; a brazing material bonded to the semiconductor substrate; a heat sink connected to the semiconductor substrate via the brazing material and a resin. The heat sink includes a protruding portion formed outside of a range in which the heatsink is connected to the semiconductor substrate via the brazing material. The protruding portion is making contact with the brazing material. The resin seals the semiconductor substrate, the brazing material and the protruding portion.

Claims (17)

1. A semiconductor device comprising:

a semiconductor substrate;

a brazing material bonded to the semiconductor substrate;

a heat sink connected to the semiconductor substrate via the brazing material and including a protruding portion formed outside of a range in which the heat sink is connected to the semiconductor substrate via the brazing material, the protruding portion making contact with the brazing material;

resin sealing the semiconductor substrate, the brazing material, and the protruding portion; and

a spacer block located between the heat sink and the brazing material,

wherein

the heat sink is connected to the semiconductor substrate via the spacer block and the brazing material, and

the protruding portion makes contact with the brazing material and the spacer block.

2. A method for manufacturing a semiconductor device, the method comprising:

forming a semiconductor substrate, a brazing material bonded to the semiconductor substrate, and a heat sink connected to the semiconductor substrate via the brazing material,

the heat sink includes a protruding portion formed outside of a range in which the heat sink is connected to the semiconductor substrate via the brazing material, the protruding portion making contact with the brazing material,

the semiconductor substrate, the brazing material, and the protruding portion are sealed with resin; and

a spacer block located between the heat sink and the brazing material,

wherein

the heat sink is connected to the semiconductor substrate via the spacer block and the brazing material, and

the protruding portion makes contact with the brazing material and the spacer block.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2020
From: TOYOTA JIDOSHA KABUSHIKI KAISHA
To: DENSO CORPORATION
Reel/Frame 052285/0419 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2015
From: HAYASHI, SHOJI
To: TOYOTA JIDOSHA KABUSHIKI KAISHA
Reel/Frame 035111/0348 →