Light-emitting diode

1. A light-emitting diode, comprising:

a stacked semiconductor layer structure, comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and said active layer disposed between said first-type semiconductor layer and said second-type semiconductor layer; and

a first electrode and a second electrode, disposed on the same side of said stacked semiconductor layer structure, said first electrode disposed on said first-type semiconductor layer, and said second electrode disposed on said second-type semiconductor layer;

wherein said first electrode comprises a single metal reflective layer and a pad layer; said pad layer is disposed on said single metal reflective layer; the thickness of said single metal reflective layer is greater than the thickness of said active layer; the height of the bottom of said single metal reflective layer is lower than the height of the bottom of said active layer; the height of the top of said single metal reflective layer is higher than the height of the top of said active layer; the area of the metal reflective layer is the same as the area of the pad layer; and at least a portion of light emitted from said active layer is reflected by said single metal reflective layer.

2. The light-emitting diode of claim 1 , further comprising a transparent conductive layer disposed between said second-type semiconductor layer and said second electrode.

3. The light-emitting diode of claim 2 , wherein the height of the top of said single metal reflective layer is not lower than the height of said transparent conductive layer.

4. The light-emitting diode of claim 3 , wherein a gap with a width ranged between 7-8 um is formed between said first electrode and said active layer.

5. The light-emitting diode of claim 3 , wherein the material of said single metal reflective layer includes aluminum or aluminum alloy.

6. The light-emitting diode of claim 5 , wherein the material of said pad layer includes gold.

7. The light-emitting diode of claim 3 , wherein the material of said single metal reflective layer includes one selected from the group consisting of aluminum, platinum, titanium, tantalum, ruthenium, rhodium, silver, nickel, and lead.

8. The light-emitting diode of claim 3 , wherein the thickness of said single metal reflective layer is not less than 1 um.

9. The light-emitting diode of claim 3 , wherein the material of said pad layer includes gold.

10. The light-emitting diode of claim 3 , wherein the thickness of said pad layer is not less than 0.8 um.

11. The light-emitting diode of claim 1 , wherein a gap with a width ranged between 7-8 um is formed between said first electrode and said active layer.

12. The light-emitting diode of claim 1 , wherein the material of said single metal reflective layer includes aluminum or aluminum alloy.

13. The light-emitting diode of claim 12 , wherein the material of said pad layer includes gold.

14. The light-emitting diode of claim 1 , wherein the material of said single metal reflective layer includes one selected from the group consisting of aluminum, platinum, titanium, tantalum, ruthenium, rhodium, silver, nickel, and lead.

15. The light-emitting diode of claim 1 , wherein the thickness of said single metal reflective layer is not less than 1 um.

16. The light-emitting diode of claim 1 , wherein the material of said pad layer includes gold.

17. The light-emitting diode of claim 1 , wherein the thickness of said pad layer is not less than 0.8 um.

18. The light-emitting diode of claim 1 , further comprising a reflective layer and a substrate, wherein the substrate is interposed between the reflective layer and the stacked semiconductor layer structure.