Illuminator for wafer prober and related methods
Various techniques are disclosed for an illuminator and related methods to be used with a wafer prober to provide illumination (e.g., visible and/or non-visible electromagnetic radiation) to perform testing, calibration, and/or inspection of devices on a wafer. For example, an illuminator may include a plurality of radiation sources, a reflector, an actuator for the reflector, a shutter, an actuator for the shutter, and/or a light pipe. Various components of the illuminator may interface with a wafer prober to provide sufficiently uniform and stable illumination with fast-switching intensities, wavelengths, and/or other properties. Such illumination provided by various embodiments of the illuminator may permit the wafer prober to perform high-throughput testing, calibration, and/or inspection of devices that may be fabricated and/or packaged on a wafer.
1. An apparatus comprising:
a plurality of infrared (IR) radiation sources;
a reflector comprising a first reflective surface and a second reflective surface disposed on opposite sides of the reflector and adapted to receive IR radiation from the IR radiation sources;
an actuator adapted to selectively move the reflector to a plurality of different positions to use the first and second reflective surfaces, respectively, to direct the IR radiation emitted from different selected ones of the IR radiation sources to devices on a wafer; and
wherein the apparatus is adapted to be implemented with a wafer prober to test the devices.
2. The apparatus of claim 1 , further comprising a light pipe comprising a reflective interior surface adapted to pass the IR radiation from the selected one of the IR radiation sources to the devices.
3. The apparatus of claim 2 , wherein the light pipe comprises an apodizer adapted to adjust an illumination profile of the IR radiation passed to the devices.
4. The apparatus of claim 3 , wherein the apodizer is suspended in an interior passage of the light pipe.
5. The apparatus of claim 2 , wherein the reflective interior surface comprises gold, aluminum, silver, copper, or rhodium.
6. The apparatus of claim 1 , further comprising a shutter adapted to selectively block or pass the IR radiation from the selected one of the IR radiation sources to the devices.
7. The apparatus of claim 1 , wherein each of the IR radiation sources is adapted to emit its associated IR radiation with a different intensity and/or wavelength than the other IR radiation sources.
8. The apparatus of claim 1 , wherein each of the IR radiation sources is a black body adapted to be heated to a different temperature to emit its associated IR radiation with a different intensity than the other IR radiation sources.
9. The apparatus of claim 1 , wherein the reflector comprises at least one of gold, aluminum, silver, copper, or rhodium reflective surface.
10. The apparatus of claim 1 , wherein:
the actuator is adapted to move the reflector by rotating the reflector to a first one of the positions to direct the IR radiation from a first one of the IR radiation sources via the first reflective surface to the devices, and move the reflector by rotating the reflector to a second one of the positions to direct the IR radiation from a second one of the IR radiation sources via the second reflective surface to the devices; and
the first and second IR radiation sources are disposed substantially opposite each other.
11. The apparatus of claim 1 , further comprising the wafer prober, wherein the devices are imaging sensors comprising bolometers responsive to the IR radiation directed by the reflector, and wherein the wafer prober comprises test circuitry adapted to detect signals from the imaging sensors in response to the IR radiation received by the bolometers.
12. A method comprising:
emitting infrared (IR) radiation from a plurality of IR radiation sources;
receiving the IR radiation from at least one of the IR radiation sources at a reflector;
rotating the reflector to a first one of a plurality of different positions to direct the IR radiation emitted from a first one of the plurality of IR radiation sources to devices on a wafer;
rotating the reflector to a second one of the plurality of different positions to direct the IR radiation emitted from a second one of the plurality of IR radiation sources to the devices on the wafer; and
detecting, by a wafer prober, signals from the devices in response to the IR radiation from the different IR radiation sources directed to the devices, wherein the devices comprise imaging sensors comprising bolometers responsive to the IR radiation directed by the reflector.
13. The method of claim 12 , further comprising passing, by a reflective interior surface of a light pipe, the IR radiation from the reflector to the devices.
14. The method of claim 13 , further comprising adjusting, by an apodizer of the light pipe, an illumination profile of the IR radiation passed to the devices.
15. The method of claim 13 , wherein the reflective interior surface comprises gold, aluminum, silver, copper, or rhodium.
16. The method of claim 12 , further comprising selectively blocking or passing, by a shutter, the IR radiation from the reflector to the devices.
17. The method of claim 12 , wherein each of the IR radiation sources emits its associated IR radiation with a different intensity and/or wavelength than the other IR radiation sources.
18. The method of claim 12 , wherein each of the IR radiation sources is a black body heated to a different temperature to emit its associated IR radiation with a different intensity than the other IR radiation sources.
19. The method of claim 12 , wherein the reflector comprises at least one of gold, aluminum, silver, copper, or rhodium reflective surface.
20. The method of claim 12 , wherein:
the reflector comprises a first reflective surface and a second reflective surface disposed on opposite sides of the reflector; and
the first and second IR radiation sources are disposed substantially opposite each other.