Technique for repairing a reflective photo-mask
View Patent ↗During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information specifying a defect associated with a location on a top surface of the reflective photo-mask, the modification to the reflective photo-mask is calculated. For example, the calculation may involve an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to calculate the modification at an object plane in the photo-lithographic process. Note that the modification includes a material added to the top surface of the reflective photo-mask using an additive fabrication process. Moreover, the modification is proximate to the location.
1. A computer-implemented method for calculating a modification to a reflective photo-mask, comprising:
receiving information specifying a defect underneath a top surface of the reflective photo-mask and associated with at least a location on the top surface of the reflective photo-mask; and
using the computer, calculating the modification to the reflective photo-mask for correcting the defect, wherein the modification includes adding a material to the top surface of the reflective photo-mask using an additive fabrication process.
2. The method of claim 1 , wherein the calculating involves an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to calculate the modification at an object plane in the photo-lithographic process.
3. The method of claim 1 , wherein the defect includes a phase error.
4. The method of claim 1 , wherein the receiving involves identifying the defect.
5. The method of claim 1 , wherein the material includes carbon.
6. The method of claim 1 , wherein the modification further includes defining a pattern in an absorption layer in the reflective photo-mask using a subtractive fabrication process.
7. The method of claim 1 , wherein the modification increases a margin in a photo-lithographic process that uses the reflective photo-mask.
8. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a non-transitory computer-readable storage medium and a computer-program mechanism embedded therein to calculate a modification to a reflective photo-mask, the computer-program mechanism including:
instructions for receiving information specifying a defect underneath a top surface of the reflective photo-mask and associated with at least a location on the top surface of the reflective photo-mask; and
instructions for calculating the modification to the reflective photo-mask for correcting the defect, wherein the modification includes adding a material to the top surface of the reflective photo-mask using an additive fabrication process.
9. The computer-program product of claim 8 , wherein the calculating involves an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to determine the modification at an object plane in the photo-lithographic process.
10. The computer-program product of claim 8 , wherein the defect includes a phase error.
11. The computer-program product of claim 8 , wherein the material includes carbon.
12. The computer-program product of claim 8 , wherein the modification further includes defining a pattern in an absorption layer in the reflective photo-mask using a subtractive fabrication process.
13. A computer system, comprising:
at least one processor;
at least one memory; and
at least one program module, the program module stored in the memory and configured to be executed by the processor to calculate a modification to a reflective photo-mask for correcting a defect, the program module including:
instructions for receiving information specifying a defect underneath a top surface of the reflective photo-mask and associated with at least a location on the top surface of the reflective photo-mask; and
instructions for calculating the modification to the reflective photo-mask, wherein the modification includes adding a material to the top surface of the reflective photo-mask using an additive fabrication process.
14. The computer system of claim 13 , wherein the calculating involves an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to determine the modification at an object plane in the photo-lithographic process.
15. The computer system of claim 13 , wherein the defect includes a phase error.
16. A reflective photo-mask, comprising:
a substrate;
a multilayer stack disposed on the substrate;
an absorption layer disposed on a top surface of the multilayer stack; and
another material added to the reflective photo-mask by an additive fabrication process after a defect was found underneath a top surface on the reflective photo-mask, wherein the other material is added proximate to a location on the top surface of the reflective photo-mask, and wherein the location is associated with the defect in the reflective photo-mask and wherein such defect is corrected by such other material.