Light emitting device including tandem structure

1. A light emitting device comprising:

a pair of electrodes;

two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein each of the two or more light emitting elements comprises a layer comprising an emissive material, wherein the emissive material included in each of the two or more light emitting elements comprises quantum dots, and wherein the layers included in the two or more light emitting elements emit light of a same color; and

a charge generation element disposed between adjacent light emitting elements in the stacked arrangement, the charge generation element comprising a first layer comprising nanoparticles of an inorganic n-type semiconductor material and a second layer comprising a hole injection material; where the nanoparticles of the inorganic n-type semiconductor material are in direct contact with at least one layer of the emissive material.

2. The light emitting device in accordance with claim 1 wherein the light emitting device is encapsulated.

3. The light emitting device in accordance with claim 1 wherein the quantum dots included in the at least one of the light emitting elements have a monodisperse size distribution.

4. The light emitting device in accordance with claim 3 wherein at least one of the other light emitting elements includes an emissive material comprising an organic electroluminescent material.

5. The light emitting device in accordance with claim 1 wherein the emissive material included in each of the light emitting elements comprises quantum dots with a monodisperse size distribution.

6. The light emitting device in accordance with claim 1 wherein the inorganic n-type semiconductor material comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group compound, a Group II-IV-VI compound, a Group II-IV-V compound, a Group IV element, an alloy including any of the foregoing and/or a mixture including any of the foregoing.

7. The light emitting device in accordance with claim 1 wherein the nanoparticles of the inorganic n-type semiconductor material include non-light emitting nanoparticles of the inorganic n-type semiconductor material.

8. The light emitting device in accordance with claim 1 wherein the nanoparticles are not surface passivated.

9. The light emitting device in accordance with claim 1 wherein the nanoparticles of the inorganic n-type semiconductor material include n-type zinc oxide nanoparticles.

10. The light emitting device in accordance with claim 1 wherein the hole injection material comprises an organic material without an inorganic dopant.

11. The light emitting device in accordance with claim 1 wherein the first layer comprising the nanoparticles of the inorganic n-type semiconductor material injects electrons into the contiguous light emitting element and the second layer comprising a hole injection material inject holes into the contiguous light emitting element.

12. The light emitting device in accordance with claim 1 wherein at least one of the light emitting elements further comprises one or more additional layers.

13. The light emitting device in accordance with claim 1 wherein at least one of the light emitting elements comprises:

a first layer comprising a charge transport material; and

a second layer comprising the emissive layer.

14. The light emitting device in accordance with claim 13 wherein each of the at least one of the light emitting elements further comprises a third layer comprising a second charge transport material on a side of the second layer opposite the first layer.

15. The light emitting device in accordance with claim 1 wherein the charge generation element is at least 80% transparent to light passage.

16. The light emitting device in accordance with claim 1 wherein the emissive layer comprising quantum dots is contiguous to the first layer of the charge generation element.

17. The light emitting device in accordance with claim 1 wherein the light emitting element contiguous to the second layer of the charge generation element includes a layer comprising a hole transport material between the emissive layer and the second layer.