METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING APPARATUS OF THE SAME
According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a cap layer on the first magnetic layer, heating a base including the cap layer after the cap layer is formed, forming a nonmagnetic layer on the cap layer while the base is heated, cooling the base including the nonmagnetic layer after the nonmagnetic layer is formed, and forming a second magnetic layer on the nonmagnetic layer after the base is cooled.
1 . A method of manufacturing a magnetoresistive memory device, the method comprising:
forming a first magnetic layer on a substrate;
forming a cap layer on the first magnetic layer;
heating a base including the cap layer at a first temperature after the cap layer is formed;
forming a nonmagnetic layer on the cap layer; and
forming a second magnetic layer on the nonmagnetic layer.
2 . The method of claim 1 , wherein
the heating the base is heating the substrate by a hotplate on which the substrate is laid.
3 . The method of claim 1 , wherein
the heating the base is emitting infrared radiation toward the cap layer.
4 . The method of claim 1 , further comprising:
heating the base including the first magnetic layer at a second temperature lower than the first temperature before the cap layer is formed.
5 . The method of claim 1 , wherein
the cap layer and the nonmagnetic layer are formed by sputtering in a same chamber.
6 . The method of claim 1 , wherein
the cap layer is nonmagnetic.
7 . The method of claim 5 , wherein
the cap layer and the nonmagnetic layer are of a same material.
8 . The method of claim 1 , wherein
one of the first and second magnetic layers is a storage layer and other one of the layers is a reference layer, and
the nonmagnetic layer is a tunnel barrier layer.
9 . The method of claim 1 , wherein
the cap layer is oxide or nitride including at least one of Si, Ba, Ca, La, Mn, Zn, Hf, Ta, Ti, B, Cu, Cr, V, Mg, and Al.
10 . The method of claim 1 , wherein
the base including the nonmagnetic layer is cooled after the nonmagnetic layer is formed and before the second magnetic layer is formed.
11 . The method of claim 1 , wherein
the heating at the first temperature is continued while the nonmagnetic layer is formed.
12 . The method of claim 4 , wherein
the heating at the second temperature is continued while the cap layer is formed.
13 . The method of claim 4 , wherein
the second temperature is equal to or lower than 200° C.
14 . A manufacturing apparatus of a magnetoresistive memory device, the apparatus comprising:
a first sputtering chamber to form a first magnetic layer on a substrate;
a second sputtering chamber to sequentially form a cap layer and a nonmagnetic layer on the first magnetic layer, the second sputtering chamber comprising a heating mechanism; and
a transfer chamber to transfer the substrate between the chambers.
15 . The apparatus of claim 14 , further comprising:
a cooling chamber to cool the substrate on which the cap layer and the nonmagnetic layer are formed.
16 . The apparatus of claim 14 , wherein
the heating mechanism is a hotplate provided on a side of a stage on which the substrate is laid.
17 . The apparatus of claim 14 , wherein
the heating mechanism is a lamp which emits infrared radiation.
18 . The apparatus of claim 14 , wherein
the heating mechanism heats the substrate on which the first magnetic layer and the cap layer are formed.
19 . The apparatus of claim 14 , wherein
the heating mechanism is configured to set a first temperature at which the cap layer is formed and a second temperature at which the nonmagnetic layer is formed to be different from each other, and
the second temperature is higher than the first temperature.
20 . The apparatus of claim 15 , wherein
the first sputtering chamber is configured to form a second magnetic layer on the nonmagnetic layer on the substrate cooled by the cooling chamber.
21 . The apparatus of claim 15 , further comprising:
a third sputtering chamber to form the second magnetic layer on the nonmagnetic layer on the substrate cooled by the cooling chamber.
22 . A manufacturing apparatus of a magnetoresistive memory device, the apparatus comprising:
a sputtering chamber to form a magnetic layer and a nonmagnetic layer on a substrate;
a heating chamber to heat the substrate; and
a transfer chamber to transfer the substrate between the chambers.
23 . The apparatus of claim 22 , further comprising:
a cooling chamber to cool the substrate.