Reduced load memory module using wire bonds and a plurality of rank signals
An apparatus for reducing load in a memory module. In such an apparatus, there is a circuit platform with a plurality of memory chips coupled to the circuit platform. Each memory chip of the plurality of memory chips each has a plurality of memory dies. At least one controller is coupled to the circuit platform and further coupled to the plurality of memory chips for communication with the plurality of memory dies thereof. The at least one controller is for receiving chip select signals to provide a plurality of rank select signals in excess of the chip select signals. The plurality of memory dies are coupled with wire bonds within the plurality of memory chips for a reduced load for coupling the circuit platform for communicating via a memory channel. The load is sufficiently reduced for having at least two instances of the memory module share the memory channel.
1. A memory system, comprising:
a first memory module and a second memory module coupled to a same memory channel for sharing the memory channel;
each of the first memory module and the second memory module, comprising:
a circuit platform;
a plurality of memory chips coupled to the circuit platform;
wherein each memory chip of the plurality of memory chips has a plurality of memory dies;
at least one controller coupled to the circuit platform and further coupled to the plurality of memory chips for communication with the plurality of memory dies thereof;
wherein the at least one controller is for receiving chip select signals to provide a plurality of rank select signals in excess of the chip select signals;
wherein the plurality of memory dies are coupled with wire bonds within the plurality of memory chips for a reduced load for coupling the circuit platform for communicating via a memory channel; and
wherein the load is sufficiently reduced for having at least the first memory module and the second memory module share the memory channel;
wherein a memory chip of the first memory module and a memory chip of the second memory module are commonly coupled to receive an N-bit rank select signal of the plurality of rank select signals for sharing the memory channel;
wherein a first portion of the N-bit rank select signal is for a front/reverse-side select signal;
wherein a second portion of the N-bit rank select signal is for a local-chip select signal; and
wherein a third portion of the N-bit rank select signal is for a die select signal.
2. The memory system according to claim 1 , wherein each of the first memory module and the second memory module is a registered dual in-line memory module.
3. The memory system according to claim 1 , wherein each of the first memory module and the second memory module is a quad-rank memory module.
4. The memory system according to claim 1 , wherein the load without buffering data is for supporting the at least the first memory module and the second memory module on the memory channel.
5. The memory system according to claim 1 , wherein the wire bonds within the plurality of memory chips are for interfacing integrated circuitry of the plurality of memory dies coupled to underside surfaces of the plurality of memory dies for coupling to the circuit platform for communication with the memory channel.
6. The memory system according to claim 1 , wherein the N-bit rank select signal of the plurality of rank select signals is for selecting:
a first subset of the plurality of memory chips;
a second subset of the first subset of the plurality of memory chips; and
a subset of the plurality of memory dies within the second subset of the plurality of memory chips.
7. The memory system according to claim 1 , wherein the load is for supporting a data transfer rate of at least 2400 megatransfers per second with the at least the first memory module and the second memory module on the memory channel.
8. The memory system according to claim 7 , wherein each of the first memory module and the second memory module has a reduced load without data buffers for supporting the at least the first memory module and the second memory module on the memory channel.
9. The memory system according to claim 1 , wherein the at least one controller comprises a rank multiplier block coupled for receiving the chip select signals and corresponding address information for providing the plurality of rank select signals.
10. The memory system according to claim 9 , wherein the address information comprises at least portions of decoded addresses obtainable via the memory channel.
11. The memory system according to claim 9 , wherein:
the plurality of memory dies have corresponding first data buses; and
the plurality of memory chips have corresponding second data buses;
wherein each of the second data buses has a larger data bus width than each of the first data buses.
12. The memory system according to claim 11 , wherein each of the first memory module and the second memory module has a data bus having a larger data bus width than each of the second data buses for communicating via the memory channel.
13. A system, comprising:
a motherboard having a memory bus for a memory channel;
a processor coupled to the motherboard;
a first memory module coupled to the memory bus for communicating via the memory channel;
a second memory module coupled to the memory bus for communication via the memory channel;
wherein each of the first memory module and the second memory module comprises:
a circuit platform;
a plurality of memory chips coupled to the circuit platform;
wherein each memory chip of the plurality of memory chips has a plurality of memory dies;
at least one controller coupled to the circuit platform and further coupled to the plurality of memory chips for communication with the plurality of memory dies thereof;
wherein the at least one controller is for receiving chip select signals via the memory bus communicated to provide a plurality of rank select signals within the memory module in excess of the chip select signals;
wherein the plurality of memory dies are coupled with wire bonds within the plurality of memory chips for a reduced load for coupling the circuit platform for communicating via the memory channel; and
wherein the load is sufficiently reduced for having at least the first memory module and the second memory module share the memory channel;
wherein a memory chip of the first memory module and a memory chip of the second memory module are commonly coupled to receive an N-bit rank select signal of the plurality of rank select signals for sharing the memory channel;
wherein a first portion of the N-bit rank select signal is for a front/reverse-side select signal;
wherein a second portion of the N-bit rank select signal is for a local-chip select signal; and
wherein a third portion of the N-bit rank select signal is for a die select signal.
14. The system according to claim 13 , wherein each of the first memory module and the second memory module is a registered dual in-line memory module.
15. The system according to claim 13 , wherein the load for each of the first memory module and the second memory module without buffering data is for supporting the at least the first memory module and the second memory module on the memory channel.
16. The system according to claim 13 , wherein the plurality of rank select signals are for selecting:
a first subset of the plurality of memory chips from each of the first memory module and the second memory module;
a second subset of the first subset of the plurality of memory chips of each of the first memory module and the second memory module; and
a subset of the plurality of memory dies within the second subset of the plurality of memory chips of each of the first memory module and the second memory module.
17. The system according to claim 13 , wherein the at least one controller comprises a rank multiplier block coupled for receiving the chip select signals and corresponding address information for providing the rank select signals.