Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor component on a carrier body that includes a ceramic body and a thermistor sensor structure directly connected to the ceramic body. The thermistor sensor structure is integrated into the carrier body and includes a heat sink, on which the carrier body is mounted.
1. A semiconductor device comprising:
a semiconductor component;
a carrier body on which the semiconductor component is mounted, the carrier body comprising a ceramic body and thermistor sensor structures each directly connected to the ceramic body, the thermistor sensor structures being integrated into the carrier body; and
a heat sink, wherein the carrier body is mounted on the heat sink,
wherein the semiconductor device is configured to establish a heat dissipating path between the semiconductor component, the carrier body and the heat sink, wherein one of the thermistor sensor structures is arranged on a side of the carrier body facing the semiconductor component and another of the thermistor sensor structures is arranged on a side of the carrier body facing away from the semiconductor component.
2. The semiconductor device according to claim 1 , wherein the ceramic body has an electrical resistivity of more than 50 000 ohm·cm.
3. The semiconductor device according to claim 1 , wherein the thermistor sensor structures have an electrical resistivity of less than 5000 ohm·cm.
4. The semiconductor device according to claim 1 , wherein the thermistor sensor structures comprise NTC thermistors.
5. The semiconductor device according to claim 1 , wherein the heat sink comprises a metallic heat sink.
6. The semiconductor device according to claim 1 , wherein the carrier body is mounted directly on the heat sink.
7. The semiconductor device according to claim 1 , wherein the carrier body has a contact structure, the semiconductor component being mounted on the carrier body by way of the contact structure.
8. The semiconductor device according to claim 1 , wherein the carrier body has a metal structure for redistribution wiring and for electrical connection of the semiconductor component.
9. The semiconductor device according to claim 1 , wherein the carrier body has an insulator layer between the one thermistor sensor structure that faces the semiconductor component and the semiconductor component.
10. The semiconductor device according to claim 1 , further comprising a plurality of carrier bodies and a plurality of semiconductor components, wherein the plurality of carrier bodies are mounted on the heat sink, and wherein each carrier body of the plurality of carrier bodies has a respective semiconductor component of the plurality of semiconductor components mounted thereon.
11. The semiconductor device according to claim 1 , further comprising a discrete protective component disposed on the heat sink.
12. The semiconductor device according to claim 1 , wherein the semiconductor component comprises a power semiconductor component.
13. The semiconductor device according to claim 1 , wherein the semiconductor component comprises a component selected from the group consisting of a light-emitting diode, a graphics chip, an amplifier chip and a discrete power transistor.
14. The semiconductor device according to claim 1 , wherein the ceramic body comprises aluminum oxide and/or aluminum nitride.
15. The semiconductor device according to claim 1 , wherein the thermistor sensor structures comprise PTC thermistors.
16. A semiconductor device comprising:
a semiconductor component;
a carrier body on which the semiconductor component is mounted, the carrier body comprising a ceramic body and a thermistor sensor structure directly connected to the ceramic body, the thermistor sensor structure being integrated into the carrier body;
an insulating layer arranged between the thermistor sensor structure and the semiconductor component, the insulating layer being reflective; and
a heat sink, wherein the carrier body is mounted on the heat sink.
17. The semiconductor device according to claim 16 , wherein the insulating layer is white.
18. The semiconductor device according to claim 16 , wherein the insulating layer comprises aluminum oxide, titanium oxide, silicon oxide or a plastic material.
19. The semiconductor device according to claim 16 , wherein the carrier body has thermal vias that project through the ceramic body and are in thermal contact with the thermistor sensor structure.