BAW component and method for manufacturing a BAW component
A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.
1. A bulk acoustic wave (BAW) component, comprising:
a bottom electrode;
a top electrode;
a first piezoelectric layer between the bottom electrode and the top electrode, wherein the first piezoelectric layer comprises a first piezoelectric material having a higher piezoelectric coefficient than aluminum nitride (AlN); and
a second piezoelectric layer between the bottom electrode and the first piezoelectric layer, wherein the second piezoelectric layer comprises a second piezoelectric material that is a different material than the first piezoelectric material.
2. The BAW component of claim 1 , wherein the piezoelectric material comprises scandium (Sc) doped AIN.
3. The BAW component of claim 1 , wherein a lattice parameter mismatch of the first piezoelectric layer's material and the second piezoelectric layer's material is less than 10%.
4. The BAW component of claim 1 , wherein the second piezoelectric layer has a (002) texturation at an interface towards the first piezoelectric layer.
5. The BAW component of claim 1 , further comprising a third piezoelectric layer between the first piezoelectric layer and the top electrode.
6. The BAW component of claim 5 , wherein the third piezoelectric layer comprises a third piezoelectric material that is a different material than the first piezoelectric material.
7. The BAW component of claim 1 , wherein the second piezoelectric layer comprises AIN.