Voltage detection circuit
View Patent ↗To provide a voltage detection circuit in which the influence on a detection voltage by semiconductor manufacturing variations is small and which is small in current consumption. A voltage detection circuit is provided which detects a voltage, based on an output signal of a detection circuit and outputs a detection signal. The detection circuit includes a first MOS transistor unit which allows a first current to flow, a second MOS transistor unit which allows a second current to flow, and a current voltage conversion unit which converts each of the first current and the second current into a voltage and outputs the same as the detection signal. A voltage characteristic of the first current and a voltage characteristic of the second current are configured so as to be crossed with each other at a predetermined voltage.
1. A voltage detection circuit comprising:
a detection circuit; and
an output circuit configured to detect a voltage, based on an output signal of the detection circuit and outputs a detection signal,
the detection circuit including:
a first MOS transistor unit configured to allow a first current to flow,
a second MOS transistor unit configured to allow a second current to flow, and
a single current voltage conversion unit connected to each of the first and second MOS transistor units by respective first and second connection lines and configured to covert each of the first current and the second current to a voltage and to output the voltage along the first and second connection lines to the output circuit as the detection signal,
wherein a voltage on the first current line and a voltage on the second current line are the same at a predetermined voltage, and
wherein the first MOS transistor unit is comprised of a first NMOS transistor, and the second MOS transistor unit is comprised of a second NMOS transistor, and
wherein the first NMOS transistor has a longer gate length and wider in gate width than the second NMOS transistor, such that a current difference exits due to a channel length modulation effect of each MOS transistor.
2. The voltage detection circuit according to claim 1 , wherein the first MOS transistor unit further comprises a cascode transistor, and
wherein the first NMOS transistor has a wider gate width than the second NMOS transistor, such that a current difference exits due to a channel length modulation effect of each MOS transistor.
3. The voltage detection circuit according to claim 1 ,
wherein the first current and the second current are provided between the first and second NMOS transistor and a current difference is generated by a substrate current impact ionization in each MOS transistor.
4. The voltage detection circuit according to claim 1 ,
wherein the first NMOS transistor has a longer gate length and a smaller threshold voltage than the second NMOS transistor, such that a current difference exits due to a channel length modulation effect of each MOS transistor.
5. The voltage detection circuit according to claim 1 , wherein the first NMOS transistor comprises a depletion type NMOS transistor, and the second NMOS transistor unit comprises a second depletion type NMOS transistor, and
wherein the first depletion type NMOS transistor has a longer gate length and a wider gate width than the second depletion type NMOS transistor, such that a current difference exists due to a channel length modulation effect of each MOS transistor.
6. The voltage detection circuit according to claim 1 , wherein the current voltage conversion unit is comprised of a current mirror circuit.
7. The voltage detection circuit according to claim 1 , wherein the current voltage conversion unit is comprised of resistive elements.
8. The voltage detection circuit according to claim 1 , wherein the current voltage conversion unit is comprised of at least one constant current element.
9. The voltage detection circuit according to claim 1 , wherein the output circuit is comprised of a comparator circuit equipped with an input offset.