Semiconductor device including insulating film having opening portion and conductive film in the opening portion
Provided is a semiconductor device that occupies a small area, a highly integrated semiconductor device, or a semiconductor device with high productivity. To fabricate an integrated circuit, a first insulating film is formed over a p-channel transistor; a transistor including an oxide semiconductor is formed over the first insulating film; a second insulating film is formed over the transistor; an opening, that is, a contact hole part of a sidewall of which is formed of the oxide semiconductor of the transistor, is formed in the first insulating film and the second insulating film; and an electrode connecting the p-channel transistor and the transistor including an oxide semiconductor to each other is formed.
1. A semiconductor device comprising:
a first transistor;
a second transistor having a first opening portion;
an insulating film over the second transistor, the insulating film having a second opening portion that overlaps with the second transistor; and
a conductive film in the first opening portion and the second opening portion, the conductive film electrically connected to the first transistor,
wherein a side surface of the conductive film has a plurality of projections in a cross section in a thickness direction.
2. A semiconductor device comprising:
a first insulating film having a first opening portion;
a second insulating film over the first insulating film, the second insulating film having a second opening portion;
a third insulating film over the second insulating film, the third insulating film having a third opening portion;
a transistor over the third insulating film, the transistor having a fourth opening portion;
a first conductive film in the first opening portion, the second opening portion, the third opening portion, and the fourth opening portion, the first conductive film having a first width in the first opening portion, a second width in the second opening portion, and a third width in the third opening portion,
wherein the first opening portion, the second opening portion, the third opening portion, and the fourth opening portion are connected to each other,
wherein at least two of the first width, the second width, and the third width are different from each other,
wherein the first conductive film is in contact with a top surface of the first insulating film.
3. The semiconductor device according to claim 2 ,
wherein the second width is larger than each of the first width and the third width.
4. The semiconductor device according to claim 3 ,
wherein the first insulating film and the third insulating film each have a region including a silicon oxide film or a silicon oxynitride film, and
wherein the second insulating film has a region including a silicon nitride film, a silicon nitride oxide film, or an aluminum oxide film.
5. The semiconductor device according to claim 2 ,
wherein a top surface of the first conductive film is in contact with a second conductive film, and
wherein a bottom surface of the first conductive film is in contact with a third conductive film or a semiconductor region.
6. An electronic device comprising:
the semiconductor device according to claim 2 ; and
at least one of a display device, a microphone, a speaker, an operation key, a position input device, a lens, and a connection portion.
7. A semiconductor device comprising:
a first transistor;
a second transistor having a first opening portion;
a first insulating film over the second transistor, the first insulating film having a second opening portion;
a second insulating film over the first insulating film, the second insulating film having a third opening portion; and
a conductive film in the first opening portion, the second opening portion, and the third opening portion,
wherein the first opening portion, the second opening portion, and the third opening portion overlap with one another,
wherein a width of the second opening portion at a bottom end of the second opening portion is larger than a width of the first opening portion at a top end of the first opening portion,
wherein a width of the second opening portion at a top end of the second opening portion is larger than a width of the third opening portion at a bottom end of the third opening portion,
wherein the conductive film is in contact with a top surface of the first transistor and a side surface of the second transistor, and
wherein the first insulating film and the second insulating film comprise different insulating materials.
8. The semiconductor device according to claim 7 , wherein a top surface of the first insulating film is in contact with a bottom surface of the second insulating film.
9. The semiconductor device according to claim 7 ,
wherein the second transistor comprises a semiconductor film,
wherein the semiconductor film comprises polycrystalline silicon, and
wherein the semiconductor film comprises a channel formation region.
10. The semiconductor device according to claim 7 ,
wherein the second transistor comprises a semiconductor film,
wherein the semiconductor film comprises oxide semiconductor, and
wherein the semiconductor film comprises a channel formation region.
11. A semiconductor device comprising:
a transistor having a third opening portion;
a first conductive film;
a first insulating film over and in contact with the first conductive film, the first insulating film having a first opening portion and a fourth opening portion;
a second insulating film over and in contact with the first insulating film, the second insulating film having a second opening portion;
a second conductive film in the first opening portion and the second opening portion; and
a third conductive film in the third opening portion and the fourth opening portion,
wherein the first opening portion and the second opening portion overlap with each other,
wherein the third opening portion and the fourth opening portion overlap with each other,
wherein the second conductive film is in contact with a top surface of the first conductive film, a side surface of the first insulating film, and a bottom surface of the second insulating film, and
wherein the first insulating film and the second insulating film comprise different insulating materials.