Display device using an oxide semiconductor
View Patent ↗Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.
1. A display device comprising:
a gate electrode which is formed on a substrate;
a gate insulating film which is formed to cover the gate electrode;
an oxide semiconductor layer which is formed on the gate electrode via the gate insulating film;
a protective layer which is in contact with a channel of the oxide semiconductor layer and formed on the oxide semiconductor layer; and
source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer,
wherein a metal oxide layer is formed on the protective layer corresponding to the channel, and
wherein the metal oxide layer has a thickness between 50 nm and 200 nm.
2. A display device comprising:
a gate electrode which is formed on a substrate;
a gate insulating film which is formed to cover the gate electrode;
an oxide semiconductor layer which is formed on the gate electrode via the gate insulating film;
an etching stopper layer which is formed of a silicon oxide film and formed to cover a channel of the oxide semiconductor layer; and
source/drain electrodes which are electrically connected to the oxide semiconductor layer through a plurality of contact holes formed in the etching stopper layer, and are formed to cover the oxide semiconductor layer,
wherein a metal oxide layer is formed on the etching stopper layer corresponding to the channel, and
wherein the metal oxide layer has a thickness between 50 nm and 200 nm.
3. The display device according to claim 1 , wherein the metal oxide layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.
4. The display device according to claim 2 , wherein the metal oxide layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.
5. The display device according to claim 1 , wherein the oxide semiconductor layer includes any of In—Ga—Zn—O, In—Al—Zn—O, In—Sn—Zn—O, In—Zn—O, In—Sn—O, Zn—O, and Sn—O, as a main component.
6. The display device according to claim 2 , wherein the oxide semiconductor layer includes any of In—Ga—Zn—O, In—Al—Zn—O, In—Sn—Zn—O, In—Zn—O, In—Sn—O, Zn—O, and Sn—O, as a main component.
7. The display device according to claim 1 , wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode in a manner that the substrate and the gate electrode are not in direct contact with each other.
8. The display device according to claim 2 , wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode in a manner that the substrate and the gate electrode are not in direct contact with each other.
9. The display device according to claim 1 , wherein the display device is a liquid crystal display device in an FFS (Fringe Field Switching) mode for driving liquid crystal molecules using a fringe electric field.
10. The display device according to claim 2 , wherein the display device is a liquid crystal display device in an FFS (Fringe Field Switching) mode for driving liquid crystal molecules using a fringe electric field.
11. The display device according to claim 1 , wherein the display device is an organic EL display device in which organic light-emitting diodes are used as light emitting devices.
12. The display device according to claim 2 , wherein the display device is an organic EL display device in which organic light-emitting diodes are used as light emitting devices.
13. A display device comprising:
a gate electrode which is formed on a substrate;
a gate insulating film which is formed to cover the gate electrode;
an oxide semiconductor layer which is formed on the gate electrode via the gate insulating film;
a protective layer which is in contact with a channel of the oxide semiconductor layer and formed on the oxide semiconductor layer; and
source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer,
wherein a metal oxide layer is formed on the protective layer corresponding to the channel, and
wherein the metal oxide layer is a light shielding layer for shielding entrance of external light to the oxide semiconductor layer.
14. The display device according to claim 13 , wherein the metal oxide layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.
15. The display device according to claim 13 , wherein the oxide semiconductor layer includes any of In—Ga—Zn—O, In—Al—Zn—O, In—Sn—Zn—O, In—Zn—O, In—Sn—O, Zn—O, and Sn—O, as a main component.
16. The display device according to claim 13 , wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode in a manner that the substrate and the gate electrode are not in direct contact with each other.
17. A display device comprising:
a gate electrode which is formed on a substrate;
a gate insulating film which is formed to cover the gate electrode;
an oxide semiconductor layer which is formed on the gate electrode via the gate insulating film;
an etching stopper layer which is formed of a silicon oxide film and formed to cover a channel of the oxide semiconductor layer; and
source/drain electrodes which are electrically connected to the oxide semiconductor layer through a plurality of contact holes formed in the etching stopper layer, and are formed to cover the oxide semiconductor layer,
wherein a metal oxide layer is formed on the etching stopper layer corresponding to the channel, and
wherein the metal oxide layer is a light shielding layer for shielding entrance of external light to the oxide semiconductor layer.
18. The display device according to claim 17 , wherein the metal oxide layer is formed of any oxide of or alloy oxide in combination with titanium, molybdenum, aluminum, chromium, copper, tungsten, zirconium, tantalum, silver, and manganese.
19. The display device according to claim 17 , wherein the oxide semiconductor layer includes any of In—Ga—Zn—O, In—Al—Zn—O, In—Sn—Zn—O, In—Zn—O, In—Sn—O, Zn—O, and Sn—O, as a main component.
20. The display device according to claim 17 , wherein the substrate is a glass substrate, and a silicon nitride film is formed between the substrate and the gate electrode in a manner that the substrate and the gate electrode are not in direct contact with each other.