Method of optimizing the quantum efficiency of a photodiode

1. A method of making a photodiode, comprising:

forming an active portion in a silicon substrate;

covering the active portion with a stack of insulating layers transparent to an infrared wavelength, said stack successively comprising starting from the silicon substrate at least: a first silicon oxide layer having a thickness in the range from 5 to 50 nm, an antireflection layer having its thickness in the range from 10 to 80 nm, and a second silicon oxide layer;

said photodiode having an optimized quantum efficiency obtained by:

determining, for said infrared wavelength, a plurality of first thicknesses of silicon oxide corresponding to instances of maximum absorptions of the photodiode, wherein a pseudo-period separates two successive maximum absorption values,

selecting, from among the first thicknesses, a thickness eoxD so that a maximum manufacturing dispersion D*eoxD is smaller than a half of the pseudo-period, wherein D is a manufacturing dispersion rate, and

depositing the second silicon oxide layer having the thickness eoxD within a margin of D*eoxD.

2. The method of claim 1 , further comprising coating the second silicon oxide layer with a silicon nitride layer having a thickness smaller than 50 nm.

3. The method of claim 1 , wherein the infrared wavelength is in the range from 700 to 1,000 nm.

4. The method of claim 1 , wherein the thickness of the substrate is between 1 and 3 μm.

5. The method of claim 1 , wherein the antireflection layer is made of silicon nitride.

6. The method of claim 5 , wherein the infrared wavelength is equal to 850 nm, the dispersion rate D is equal to 0.1, the thickness of the first silicon oxide layer is 25 nm, the thickness of the antireflection layer is 50 nm, and the thickness eoxD selected for the second silicon oxide layer is selected from the group consisting of 60 nm, 340 nm, and 640 nm.

7. A method of manufacturing a photodiode of optimized quantum efficiency for a desired infrared wavelength, comprising the steps of:

a) determining a plurality of first thicknesses of silicon oxide corresponding to instances of maximum absorptions of the photodiode at the desired infrared wavelength, wherein a pseudo-period separates two successive maximum absorption values;

b) selecting, from among the first thicknesses, a thickness eoxD so that a maximum manufacturing dispersion D*eoxD is smaller than a half of the pseudo-period, wherein D is a manufacturing dispersion rate;

c) providing a photodiode having its active portion formed in a silicon substrate and covered with a stack of insulating layers transparent to said desired infrared wavelength, said stack successively comprising at least: a first silicon oxide layer, an antireflection layer, a second silicon oxide layer having a thickness greater than or equal to said thickness eoxD within a margin of D*eoxD, an etch stop layer, and a third silicon oxide layer; and

d) etching said stack all the way to the etch stop layer.

8. The method of claim 7 , further comprising the step of: e) etching through the etch stop layer.

9. The method of claim 8 , wherein the thickness of the second silicon oxide layer is greater than the desired thickness, eoxD, the method further comprising the step of: f) partially etching the second silicon oxide layer to leave in place a portion of desired thickness eoxD thereof.

10. The method of claim 7 , wherein the etch stop layer is made of silicon nitride.

11. A method of manufacturing a photodiode of optimized quantum efficiency, wherein the photodiode has an active portion in a silicon substrate that is covered with a stack of insulating layers transparent to an infrared wavelength, comprising:

determining, for said infrared wavelength, a plurality of first thicknesses of silicon oxide corresponding to instances of maximum absorptions of the photodiode, wherein a pseudo-period separates two successive maximum absorption values,

selecting, from among the first thicknesses, a thickness eoxD so that a maximum manufacturing dispersion D*eoxD is smaller than a half of the pseudo-period, wherein D is a manufacturing dispersion rate, and

forming the stack of insulating layers to include a first silicon oxide layer, an antireflection layer and a second silicon oxide layer, wherein the second silicon oxide layer has the thickness eoxD within a margin of D*eoxD.

12. The method of claim 11 , further comprising:

forming the first silicon oxide layer having a thickness in the range from 5 to 50 nm, and

forming the antireflection layer having a thickness in the range from 10 to 80 nm.

13. The method of claim 11 , further comprising coating the second silicon oxide layer with a silicon nitride layer having a thickness smaller than 50 nm.

14. The method of claim 11 , wherein the infrared wavelength is in the range from 700 to 1,000 nm.

15. The method of claim 11 , wherein the antireflection layer is made of silicon nitride.

16. The method of claim 5 , wherein the infrared wavelength is equal to 850 nm, the dispersion rate D is equal to 0.1, and the thickness eoxD for the second silicon oxide layer is selected from the group consisting of 60 nm, 340 nm, and 640 nm.

17. A method for manufacturing a photodiode having an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer, comprising:

determining, for an infrared wavelength to be received by the photodiode, first thicknesses of the second silicon oxide layer that correspond to maximum absorptions of the photodiode;

selecting, from among the first thicknesses, a thickness eoxD such that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values; and

forming the second silicon oxide layer on the antireflection layer with said thickness eoxD.