IP Library Granted Patent US 9,337,378
Granted Patent B2
US 9,337,378 · App. 14/661,646 · Granted May 10, 2016

System and method for photovoltaic device temperature control while conditioning a photovoltaic device

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Quick Facts
Patent No.
US 9,337,378
App. No.
14/661,646
Granted
May 10, 2016
Kind
B2
Abstract

A system and method for applying an electrical bias to a photovoltaic device in a temperature control chamber, in which the temperature of the photovoltaic device is controlled according to a temperature profile. The temperature profile may include at least one hot phase and at least one cool phase.

Claims (42)

1. A method for conditioning a photovoltaic device having external electrical contacts during manufacture comprising:

controlling the temperature of the photovoltaic device according to a temperature profile; and

applying an electrical bias from a power source to the electrical contacts of the photovoltaic device having the controlled temperature;

wherein the step of controlling the temperature according to a temperature profile further comprises:

heating the photovoltaic device to a first temperature; and

cooling the photovoltaic device to a second temperature,

wherein the electrical bias is removed when the photovoltaic device reaches the second temperature.

2. The method of claim 1 , wherein the temperature profile comprises at least one hot phase and at least one cool phase.

3. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

maintaining a temperature of the photovoltaic device at the flail first temperature while applying an electrical bias.

4. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

applying convective or conductive heat to the photovoltaic device.

5. The method of claim 1 , wherein the first temperature is between about 100° C. and about 160° C., and the second temperature is between about 80° C. and about 100° C.

6. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

adjusting the temperature of the photovoltaic device at a rate of about 0°-10° C./min, to achieve at least a portion of the temperature profile.

7. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

decreasing the temperature of the photovoltaic device at a rate of about 5°-30° C./min, to achieve at least a portion of the temperature profile.

8. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

controlling the position or the power to a heat source.

9. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

controlling the position or the power to a cooling source.

10. The method of claim 1 , wherein the step of controlling the temperature of the photovoltaic device according to a temperature profile comprises:

controlling the position of an insulator.

11. The method of claim 1 , further comprising:

laminating the photovoltaic device before applying an electrical bias to the photovoltaic device having the controlled temperature.

12. A method for conditioning a photovoltaic device during manufacture comprising:

controlling the temperature of the photovoltaic device according to a temperature profile; and

applying an electrical bias to the photovoltaic device having the controlled temperature,

wherein the temperature profile has at least one cool phase and at least one hot phase, and

removing the electrical bias when the temperature profile is complete.

13. The method of claim 12 , wherein applying an electrical bias to the photovoltaic device having the controlled temperature takes place during at least a portion of the hot phase.

14. The method of claim 12 , wherein the temperature profile comprises adjusting the temperature at a constant rate during at least a portion of one of the hot phase and the cool phase.

15. The method of claim 14 , wherein the hot phase comprises:

increasing or decreasing the temperature of the photovoltaic device at a rate of about 0°-10° C./min.

16. The method of claim 14 , wherein the cool phase comprises:

decreasing the temperature of the photovoltaic device at a rate of about 5°-30° C./min.

17. The method of claim 14 , wherein adjusting the temperature at a constant rate during at least a portion of the hot phase comprises:

controlling the position of or power to a heat source.

18. The method of claim 14 , wherein adjusting the temperature at a constant rate during at least a portion of the cool phase comprises:

controlling the position of or power to a cooling source.

19. The method of claim 12 , further comprising laminating the photovoltaic device before applying an electrical bias to the photovoltaic device having the controlled temperature.

20. The method of claim 12 , wherein applying an electrical bias to the photovoltaic device having the controlled temperature is not completed until the completion of the cool phase.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Feb 13, 2026
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 074858/0364 →
SECURITY INTEREST Recorded Jul 10, 2023
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 064237/0462 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 15, 2021
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 058132/0566 →
PATENT SECURITY AGREEMENT Recorded Jul 12, 2017
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 043177/0581 →