Light-emitting semiconductor chip

1. A semiconductor chip comprising:

a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising:

an n-conductive multilayer structure, wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least one doping peak;

a p-conductive semiconductor layer; and

an active region provided for generating radiation, the active region arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer; and

a contact layer;

wherein the semiconductor body has a recess that extends through the p-conductive semiconductor layer and the active region into the n-conductive multilayer structure, and wherein the contact layer electrically contacts the n-conductive multilayer structure in the recess; and

wherein the recess penetrates the doping peak.

2. The semiconductor chip according to claim 1 , wherein a doping concentration in the at least one doping peak is at least five times as high as a doping concentration in a region of low n-conductive doping of the n-conductive multilayer structure.

3. The semiconductor chip according to claim 1 , wherein the doping concentration in the at least one doping peak is at least 4*10 18 cm −3 and wherein the doping concentration in the region of low n-conductive doping is at most 8*10 17 cm −3 .

4. The semiconductor chip according to claim 1 , wherein the doping peak exhibits a vertical extent of between 1 nm and 30 nm inclusive.

5. The semiconductor chip according to claim 4 , wherein the doping peak exhibits a vertical extent of between 5 nm and 20 nm inclusive.

6. The semiconductor chip according to claim 1 , wherein the doping peak exhibits a distance from the active region of between 2 nm and 20 nm inclusive.

7. The semiconductor chip according to claim 1 , wherein the n-conductive multilayer structure comprises a quantum structure with a plurality of quantum layers.

8. The semiconductor chip according to claim 7 , wherein the active region comprises a plurality of quantum layers, wherein the doping peak is arranged between the quantum layer of the n-conductive multilayer structure closest to the active region and the quantum layer of the active region closest to the n-conductive multilayer structure.

9. The semiconductor chip according to claim 8 , wherein a band gap of the quantum layer of the n-conductive multilayer structure is at least as large as a band gap of the quantum layer of the active region.

10. The semiconductor chip according to claim 7 , wherein the at least one doping peak comprises a first doping peak and a second doping peak, wherein at least one quantum layer of the n-conductive multilayer structure is arranged between the first doping peak and the second doping peak.

11. The semiconductor chip according to claim 10 , wherein a sub-region of the quantum structure of the n-conductive multilayer structure comprises a high doping concentration by way of the second doping peak.

12. The semiconductor chip according to claim 1 , wherein the n-conductive multilayer structure comprises a plurality of quantum layers; and

wherein the recess penetrates the quantum layers of the n-conductive multilayer structure.

13. The semiconductor chip according to claim 1 , wherein the active region is based on a nitride compound semiconductor material.

14. The semiconductor chip according to claim 1 , wherein a crystal structure of the n-conductive multilayer structure comprises V-shaped indentations.

15. The semiconductor chip according to claim 1 , wherein a growth substrate for the semiconductor layer sequence is removed from the semiconductor body.

16. The semiconductor chip according to claim 1 , wherein the contact layer directly adjoins the n-conductive multilayer structure within the recess.

17. The semiconductor chip according to claim 1 , wherein the recess ends in the n-conducting multilayer structure.