Organic light emitting diode and display panel using the same
The present invention relates to an organic light emitting diode, comprising: a first electrode; an organic material layer which comprises a hole transport layer, an electron transport layer and an light emitting layer, wherein the hole transport layer may be interposed between the first electrode and the light emitting layer, and the light emitting layer may be interposed between the hole transport layer and the electron transport layer; a second electrode which is disposed on the organic material layer; and a carrier conversion layer which may be interposed between the first electrode and the hole transport layer or between the second electrode and the electron transport layer; wherein the carrier conversion layer has a thickness of 10 nm to 200 nm.
1. An organic light emitting diode, comprising:
a first electrode;
an organic material layer which comprises a hole transport layer, an electron transport layer and an light emitting layer, wherein the hole transport layer is interposed between the first electrode and the light emitting layer, and the light emitting layer is interposed between the hole transport layer and the electron transport layer;
a second electrode disposed on the organic material layer; and
a carrier conversion layer interposed between the first electrode and the hole transport layer or between the second electrode and the electron transport layer;
wherein the carrier conversion layer has a thickness of 10 nm to 200 nm.
2. The organic light emitting diode of claim 1 , wherein the carrier conversion layer is interposed between the second electrode and the electron transport layer, and the carrier conversion layer is a P-doped carrier conversion layer.
3. The organic light emitting diode of claim 1 , wherein the carrier conversion layer is interposed between the first electrode and the hole transport layer, and the carrier conversion layer is an N-doped carrier conversion layer.
4. The organic light emitting diode of claim 2 , wherein a material of the P-doped carrier conversion layer comprises: N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB), 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), copper(II) phthalocyanine (CuPc), dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HATCN), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ), or a combination of at least two of the above materials.
5. The organic light emitting diode of claim 3 , wherein a material of the N-doped carrier conversion layer comprises: 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), tris(8-hydroxy-quinolinato)aluminium (Alq3), Fullerene (C60), 8-hydroxyquinolinolato-lithium (Liq), or a combination of at least two of the above materials.
6. The organic light emitting diode of claim 1 , wherein the carrier conversion layer is in direct contact with the first electrode or the second electrode.
7. The organic light emitting diode of claim 1 , wherein the carrier conversion layer has a thickness of 30 nm to 200 nm.
8. The organic light emitting diode of claim 2 , wherein the second electrode has a work function of 4.2 eV to 5.5 eV.
9. The organic light emitting diode of claim 2 , wherein the second electrode is a transparent conductive oxide layer.
10. A display panel, comprising:
a substrate; and
an organic light emitting diode disposed on the substrate, comprising:
a first electrode;
an organic material layer which comprises a hole transport layer, an electron transport layer and an light emitting layer, wherein the hole transport layer is interposed between the first electrode and the light emitting layer, and the light emitting layer is interposed between the hole transport layer and the electron transport layer;
a second electrode disposed on the organic material layer; and
a carrier conversion layer interposed between the first electrode and the hole transport layer or between the second electrode and the electron transport layer;
wherein the carrier conversion layer has a thickness of 10 nm to 200 nm.
11. The display panel of claim 10 , wherein the carrier conversion layer is interposed between the second electrode and the electron transport layer, and the carrier conversion layer is a P-doped carrier conversion layer.
12. The display panel of claim 10 , wherein the carrier conversion layer is interposed between the first electrode and the hole transport layer, and the carrier conversion layer is an N-doped carrier conversion layer.
13. The display panel of claim 11 , wherein a material of the P-doped carrier conversion layer comprises: N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB), 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), copper(II) phthalocyanine (CuPc), dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HATCN), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ), or a combination of at least two of the above materials.
14. The display panel of claim 12 , wherein a material of the N-doped carrier conversion layer comprises: 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), tris(8-hydroxy-quinolinato) aluminium (Alq3), Fullerene (C60), 8-hydroxyquinolinolato-lithium (Liq), or a combination of at least two of the above materials.
15. The display panel of claim 10 , wherein the carrier conversion layer is in direct contact with the first electrode or the second electrode.
16. The display panel of claim 10 , wherein the carrier conversion layer has a thickness of 30 nm to 200 nm.
17. The display panel of claim 11 , wherein the second electrode has a work function of 4.2 eV to 5.5 eV.
18. The display panel of claim 11 , wherein the second electrode is a transparent conductive oxide layer.