Granted Patent B2

US 9,401,436 · App. 14/664,878 · Granted Jul 26, 2016

Inventors: Fabio Alessio Marino (Poway, CA); Paolo Menegoli (San Jose, CA)

Assignee: QUALCOMM Incorporated

H01L29/94H01G7/06H01L27/0805H01L29/93H01L29/7391

Abstract

Claims (136)

1. A semiconductor variable capacitor comprising:

a first equivalent capacitance plate;

a second equivalent capacitance plate;

at least one control region;

wherein a capacitance value between said first and said second equivalent capacitance plate of said semiconductor variable capacitor is varied by varying a control voltage;

wherein said control region is formed in physical contact with a semiconductor region;

wherein said control region forms a rectifying junction with said semiconductor region, and

wherein the variation of said control voltage causes a variation of a voltage drop across said rectifying junction.

2. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said barrier region is located between said highly conductive region and said control region.

3. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said control region is located between said highly conductive region and said barrier region.

4. The semiconductor variable capacitor of claim 1 , wherein said control region is a first control region, further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

a second control region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said barrier region is located between said first control region and said second control region.

5. The semiconductor variable capacitor of claim 1 , wherein said control region is a first control region, further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

a second control region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said first and second control regions are located between said barrier region and said highly conductive region.

6. The semiconductor variable capacitor of claim 1 , wherein said control region is a first control region, further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

a second and a third control region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials;

wherein said first and second control regions are located between said highly conductive region and said barrier region;

wherein said barrier region is located between said highly conductive region and said third control region, and

wherein said first and second control regions are located so as, when said control voltage overcomes a threshold voltage value, said highly conductive region is electrically isolated from a portion of said semiconductor region in physical contact with said barrier region.

7. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said control region surrounds, at least partially, said barrier region.

8. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said control region and said highly conductive region are located laterally and on the same side with respect to said barrier region.

9. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region;

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein said surface of said semiconductor region covered by said barrier region is located above said control region.

10. A semiconductor variable capacitor comprising at least a first semiconductor variable capacitor according to claim 1 and a second semiconductor variable capacitor according to claim 1 ,

wherein said second semiconductor variable capacitor is formed symmetrically with respect to said first semiconductor variable capacitor, by mirroring said first semiconductor variable capacitor, and

wherein said first semiconductor variable capacitor is coupled to said second semiconductor variable capacitor.

11. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said control region, said barrier region and said highly conductive region are located so as the capacitance value between said first and second equivalent capacitance plate of said semiconductor variable capacitor can be varied by using at least one technique belonging to the group consisting of:

modulating a depletion of at least a portion of said semiconductor region so as to modify the effective area of at least one between said first and second equivalent capacitance plate;

modulating a depletion of at least a first portion of said semiconductor region so as, when said control voltage overcomes a threshold voltage value, said highly conductive region is electrically isolated from a second portion of said semiconductor region in physical contact with said barrier region, and

modulating a depletion of at least a portion of said semiconductor region to control the coupling of one or more capacitor elements with at least one of said first and second equivalent capacitance plate.

12. The semiconductor variable capacitor of claim 1 , further comprising:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said control region, said barrier region and said highly conductive region are located so as the capacitance value between said first and second capacitance plates of said semiconductor variable capacitor can be varied by using at least two techniques belonging to the group consisting of:

modulating a depletion of at least a portion of said semiconductor region so as to modify the effective area of at least one between said first and second equivalent capacitance plate;

modulating a depletion of at least a first portion of said semiconductor region so as, when said control voltage overcomes a threshold voltage value, said highly conductive region is electrically isolated from a second portion of said semiconductor region in physical contact with said barrier region, and

modulating a depletion of at least a portion of said semiconductor region to control the coupling of one or more capacitor elements with at least one of said first and second equivalent capacitance plate;

modulating a carrier population at an interface between said barrier region and at least one of said first and second equivalent capacitance plate, and

modulating a depletion of at least a portion of said semiconductor region so as to vary a junction capacitance value between said control region and at least one of said first and second equivalent capacitance plate.

13. A circuit comprising a semiconductor variable capacitor according to claim 1 , wherein said control voltage of said semiconductor variable capacitor is used to vary an impedance value in said circuit.

14. A plurality of semiconductor variable capacitors according to claim 1 , wherein said semiconductor variable capacitors are coupled together and stacked to form a high capacitance value variable capacitor.

15. The semiconductor variable capacitor of claim 1 , further comprising a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said semiconductor region form said first equivalent capacitance plate of said semiconductor variable capacitor;

wherein said second equivalent capacitance plate covers at least a portion of a surface of said barrier region, and

wherein at least a portion of said semiconductor region is formed in a semiconductor fin extending above a primary planar surface of a substrate layer.

16. A method to vary a capacitance value between a first equivalent capacitance plate and a second equivalent capacitance plate of a semiconductor variable capacitor, the method comprising:

applying a control voltage between said first equivalent capacitance plate and at least one between a control region and said second equivalent capacitance plate;

wherein said control region is formed in physical contact with a semiconductor region;

wherein the capacitance value between said first and said second equivalent capacitance plates of said semiconductor variable capacitor is varied by varying said control voltage;

wherein said control region forms a rectifying junction with said semiconductor region, and

wherein the variation of said control voltage causes a variation of a voltage drop across said rectifying junction.

17. The method of claim 16 ,

wherein said semiconductor variable capacitor is comprising at least a barrier region formed at least partially between said first and said second equivalent capacitance plate,

wherein said barrier region is made of a material belonging to the group comprising dielectric and semiconductor materials, and

wherein the capacitance value between said first and said second equivalent capacitance plate is varied by depleting or enhancing at least a portion of said semiconductor region, so as to modulate the effective area of said first equivalent capacitance plate.

18. The method of claim 16 ,

wherein said semiconductor variable capacitor further comprises:

at least a barrier region formed at least partially between said first and said second equivalent capacitance plate, and

a highly conductive region directly coupled to said semiconductor region;

wherein, when said control voltage overcomes a threshold voltage value, the depletion of a first portion of said semiconductor region electrically isolates said highly conductive region from a second portion of said semiconductor region in physical contact with said barrier region.

19. The method of claim 16 , wherein said semiconductor variable capacitor comprises a multiplicity of capacitor elements, and wherein the modulation of a depletion of at least a portion of said semiconductor region modulates the coupling of at least one of said capacitor elements with at least one of said first and second equivalent capacitance plates.

20. The method of claim 16 ,

wherein said semiconductor variable capacitor further comprises:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said capacitance value is varied by using a technique belonging to the group comprising:

modulating a depletion of at least a portion of said semiconductor region so as to modify an effective area of at least one between said first and second equivalent capacitance plate;

modulating a depletion of at least a first portion of said semiconductor region so as, when said control voltage overcomes a threshold voltage value, said highly conductive region is electrically isolated from a second portion of said semiconductor region in physical contact with said barrier region, and

modulating a depletion of at least a portion of said semiconductor region to control the coupling of one or more capacitor elements with at least one of said first and second equivalent capacitance plate.

21. The method of claim 16 ,

wherein said semiconductor variable capacitor further comprises:

a highly conductive region directly coupled to said semiconductor region;

a barrier region covering at least a portion of a surface of said semiconductor region;

wherein said capacitance value is varied by using a combination of at least two techniques belonging to the group comprising:

modulating a depletion of at least a portion of said semiconductor region so as to modify the effective area of at least one between said first and second equivalent capacitance plate;

modulating a depletion of at least a first portion of said semiconductor region so as, when said control voltage overcomes a threshold voltage value, said highly conductive region is electrically isolated from a second portion of said semiconductor region in physical contact with said barrier region, and

modulating a depletion of at least said first portion of said semiconductor region to control the coupling of one or more capacitor elements with at least one of said first and second equivalent capacitance plate;

modulating a carrier population at an interface between said barrier region and at least one of said first and second equivalent capacitance plate, and

modulating a depletion region of at least a portion of said semiconductor region so as to vary a junction capacitance value between said control region and at least one of said first and second equivalent capacitance plate.

22. The method of claim 16 , wherein said control voltage is comprising a signal generated by a pre-distortion circuit in order to optimize the linearity of said semiconductor variable capacitor.

23. A method to vary the capacitance between a first equivalent capacitance plate and a second equivalent capacitance plate of a semiconductor variable capacitor, the method comprising:

applying a first control voltage between a first control region and one between said first and second equivalent capacitance plate;

applying a second control voltage between a second control region and one between said first and second equivalent capacitance plate;

wherein said first and second control regions are formed in physical contact with a semiconductor region;

wherein the capacitance value between said first and said second equivalent capacitance plate of said semiconductor variable capacitor is varied by varying at least one of said first and second control voltage;

wherein each of said first and said second control regions forms a rectifying junction with said semiconductor region, and

whereby the use of said first and said second control voltage optimizes the electrical parameters belonging to the group consisting of quality factor, linearity, tuning range, control voltage range, tuning speed of said semiconductor variable capacitor.

Assignments (2)

Continuity (8)