Trench-based power semiconductor devices with increased breakdown voltage characteristics
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
1. A semiconductor device comprising:
a first trench extending in a semiconductor region, the first trench having a shield electrode and a gate electrode vertically stacked therein, the shield electrode being insulated from the gate electrode;
a source pad configured to receive a first external connection and electrically coupled to the shield electrode of the first trench;
a gate pad disposed above the semiconductor region and configured to receive a second external connection;
an electrical trace electrically coupled to the gate pad or to the source pad;
a second trench extending in the semiconductor region and disposed directly under at least one of the gate pad and the electrical trace, the second trench having a first electrode disposed therein, the second trench being insulated from the electrical trace by a dielectric when directly under the electrical trace;
a first mesa of semiconductor material adjacent the first trench; and
a second mesa of the semiconductor material adjacent the second trench.
2. The semiconductor device of claim 1 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region, the well region being disposed in the second mesa, the well region being electrically floating or is electrically coupled to the source pad.
3. The semiconductor device of claim 1 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region, the well region being disposed in the second mesa, at least one of the well region and the first electrode of the second trench being electrically coupled to the source pad.
4. The semiconductor device of claim 1 , wherein the gate electrode is a first gate electrode, the second trench includes a second gate electrode vertically stacked over and insulated from the first electrode, the second gate electrode is electrically coupled to the gate pad.
5. The semiconductor device of claim 4 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region, the well region being disposed in the second mesa, the well region being electrically coupled to the source pad or is electrically floating.
6. The semiconductor device of claim 1 , further comprising:
a third trench extending in a semiconductor region and disposed under the at least one of the gate pad and the electrical trace, the third trench including a gate electrode vertically stacked over and electrically insulated from a shield electrode, the gate electrode being electrically coupled to the gate pad.
7. The semiconductor device of claim 6 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region, the well region being disposed in the second mesa, the well region being electrically coupled to the source pad or electrically floating.
8. The semiconductor device of claim 1 , wherein the first electrode is electrically coupled to the source pad,
the semiconductor device further comprising:
a third trench extending in a semiconductor region and disposed under the at least one of the gate pad and the electrical trace, the third trench including a second electrode that is electrically floating.
9. The semiconductor device of claim 8 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region, the well region being disposed in the second mesa, the well region being electrically coupled to the source pad or electrically floating.
10. The semiconductor device of claim 1 , wherein the second mesa has a width that is equal to or less than 1.25 times a width of the first mesa.
11. The semiconductor device of claim 10 , wherein the first electrode is electrically coupled to the source pad.
12. The semiconductor device of claim 1 , wherein the electrical trace is electrically coupled to the first trench.
13. The semiconductor device of claim 1 , wherein the first electrode is electrically coupled to the source pad, the second mesa has a width that is equal to or less than 1.25 times a width of the first mesa.
14. The semiconductor device of claim 1 , wherein the first electrode is electrically floating, the second mesa has a width that is equal to or less than 1.25 times a width of the first mesa.
15. The semiconductor device of claim 1 , further comprising:
a shield runner made of a metal and disposed above the semiconductor region and having a portion contacting a top surface of the first electrode, the top surface of the first electrode being at or below a top surface of the semiconductor region.
16. The semiconductor device of claim 15 , further comprising:
a third trench including a floating electrode or including an electrode electrically coupled to the source pad.
17. A semiconductor device comprising:
a first trench extending in a semiconductor region, the first trench having a shield electrode and a gate electrode vertically stacked therein, the shield electrode being insulated from the gate electrode;
a source pad configured to receive a first external connection and electrically coupled to the shield electrode of the first trench;
a gate pad disposed above the semiconductor region and configured to receive a second external connection;
an electrical trace electrically coupled to the gate; and
a second trench extending in a semiconductor region and disposed directly under at least one of the gate pad and the electrical trace, the second trench having a first electrode disposed therein, the second trench being insulated from the electrical trace by a dielectric when directly under the electrical trace.
18. The semiconductor device of claim 17 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region and adjacent the second trench, the well region being electrically floating or is electrically coupled to the source pad.
19. The semiconductor device of claim 17 , further comprising:
a well region of a first conductivity type disposed in the semiconductor region and adjacent the second trench, at least one of the well region and the first electrode of the second trench being electrically coupled to the source pad.
20. The semiconductor device of claim 17 , wherein the first electrode is electrically coupled to the source pad or electrically floating.
21. The semiconductor device of claim 17 , further comprising:
a mesa adjacent to the second trench, the mesa being a floating p-type mesa region.
22. The semiconductor device of claim 21 , wherein the mesa is a first mesa,
the semiconductor device further comprising:
a second mesa adjacent the first trench, the first mesa having a width that is equal to or less than 1.25 times a width of the second mesa.