Reference voltage generation circuit
View Patent ↗A reference voltage generation circuit, including a first current source in series with a first bipolar transistor; a second current source in series with a first resistor; a third current source in series with a second bipolar transistor, the third current source being assembled as a current mirror with the first current source; a second resistor between the base of the second bipolar transistor and the junction point between the current source and the first resistor; and a fourth current source in series with a third resistor, the junction point between the fourth current source and the third resistor defining a reference voltage terminal.
1. A circuit for generating a reference voltage, comprising:
first and second supply terminals configured to provide a power supply voltage;
a first MOS transistor and a first bipolar transistor electrically coupled in series between the first and second supply terminals;
a second MOS transistor and a first resistive element electrically coupled between the first and second supply terminals, the second MOS transistor and the first resistive element being directly electrically coupled to each other by a first junction point that is electrically coupled to a base of the first bipolar transistor;
a third MOS transistor and a second bipolar transistor electrically coupled in series between the first and second supply terminals, the third MOS transistor forming a current mirror with the first MOS transistor;
a second resistive element electrically coupled between a base of the second bipolar transistor and the first junction point; and
a fourth MOS transistor and a third resistive element electrically coupled between the first and second supply terminals, the fourth MOS transistor and the third resistive element being electrically coupled to each other at a second junction point that defines an output terminal configured to provide the reference voltage, the fourth MOS transistor forming a current mirror with the second MOS transistor, a gate of the fourth MOS transistor and a gate of the second MOS transistor being electrically coupled to each other at a third junction point, the third MOS transistor being electrically coupled between the first supply terminal and the third junction point.
2. The device of claim 1 , comprising:
a fifth MOS transistor electrically coupled between the first supply terminal and the output terminal, and
a fourth resistive element series-connected with the second bipolar transistor, the fifth MOS transistor forming a current mirror with the first MOS transistor.
3. The device of claim 1 , wherein a surface area of a collector of the second bipolar transistor is greater than a surface area of a collector of the first bipolar transistor.
4. A circuit for generating a reference voltage, comprising:
first and second supply terminals configured to provide a power supply voltage;
a first transistor and a second transistor electrically coupled in series between the first and second supply terminals;
a third transistor electrically coupled between the first and second supply terminals, the third transistor being directly electrically coupled to the second transistor;
a fourth transistor and a fifth transistor electrically coupled in series between the first and second supply terminals, the fourth transistor forming a current mirror with the first transistor, the second and fifth transistors having respective control terminals electrically coupled to each other at a first junction point and the third transistor is electrically coupled between the first supply terminal and the first junction point; and
a sixth transistor and a first resistive element electrically coupled between the first and second supply terminals, the sixth transistor and the first resistive element being electrically coupled to each other at a second junction point that defines an output terminal configured to provide the reference voltage, the sixth transistor forming a current mirror with the third transistor, a control terminal of the sixth transistor and a control terminal of the third transistor being electrically coupled to each other by a third junction point, the fourth transistor being electrically coupled between the first supply terminal and the third junction point.
5. The device of claim 4 , comprising:
a second resistive element electrically coupled to the first transistor by the first junction point.
6. The device of claim 4 , comprising:
a second resistive element electrically coupled between the control terminal of the fifth transistor and the first junction point.
7. The device of claim 4 , wherein the second and fifth transistors are bipolar transistors.
8. The device of claim 7 , wherein a surface area of a collector of the fifth transistor is greater than a surface area of a collector of the second transistor.
9. The device of claim 4 , comprising:
a seventh transistor electrically coupled between the first supply terminal and the output terminal, the seventh transistor forming a current mirror with the first transistor.
10. The device of claim 4 , comprising:
a second resistive element electrically coupled in series with the fifth transistor.
11. The device of claim 4 , wherein the first, third, fourth, and sixth transistors are MOS transistors.
12. A circuit for generating a reference voltage, comprising:
first and second supply terminals configured to provide a power supply voltage;
a first transistor and a second transistor electrically coupled in series between the first and second supply terminals;
a third transistor electrically coupled between the first and second supply terminals, the third transistor being directly electrically coupled to the second transistor;
a fourth transistor and a fifth transistor electrically coupled in series between the first and second supply terminals, the fourth transistor forming a current mirror with the first transistor, the second and fifth transistors having respective control terminals electrically coupled to each other at a first junction point and the third transistor is electrically coupled between the first supply terminal and the first junction point;
a sixth transistor and a first resistive element electrically coupled between the first and second supply terminals, the sixth transistor and the first resistive element being electrically coupled to each other at a second junction point that defines an output terminal configured to provide the reference voltage, the sixth transistor forming a current mirror with the third transistor, a control terminal of the sixth transistor and a control terminal of the third transistor being electrically coupled to each other at a third junction point, the fourth transistor being electrically coupled between the first supply terminal and the third junction point;
a second resistive element electrically coupled to the first transistor by the first junction point; and
a third resistive element electrically coupled between the first and second supply terminals, the second transistor and the third resistive element being electrically coupled to each other by the first junction point.
13. The device of claim 12 , wherein the second resistive element is electrically coupled between the control terminal of the fifth transistor and the first junction point.
14. The device of claim 12 , wherein the second and fifth transistors are bipolar transistors.
15. The device of claim 14 , wherein a surface area of a collector of the fifth transistor is greater than a surface area of a collector of the second transistor.
16. The device of claim 12 , comprising:
a seventh transistor electrically coupled between the first supply terminal and the output terminal, the seventh transistor forming a current mirror with the first transistor.
17. The device of claim 12 , comprising:
a fourth resistive element electrically coupled in series with the fifth transistor.
18. The device of claim 12 , wherein the first, third, fourth, and sixth transistors are MOS transistors.