Transistor with a low-k sidewall spacer and method of making same
A transistor is formed by defining a gate stack on top of a semiconductor layer. The gate stack includes a gate dielectric and a gate electrode. A layer of a first dielectric material, having a first dielectric constant, is deposited on side walls of the gate stack to form sacrificial sidewall spacers. Raised source-drain regions are then epitaxially grown on each side of the gate stack adjacent the sacrificial sidewall spacers. The sacrificial sidewall spacers are then removed to produce openings between each raised source-drain region and the gate stack. A layer of a second dielectric material, having a second dielectric constant less than the first dielectric constant, is then deposited in the openings and on side walls of the gate stack to form low-k sidewall spacers.
1. A process, comprising:
forming a gate stack on top of a semiconductor layer, said gate stack including a gate dielectric and a gate electrode;
forming a sacrificial sidewall spacer on each side of the gate stack;
epitaxially growing raised source-drain regions on each side of the gate stack adjacent the sacrificial sidewall spacers;
removing the sacrificial sidewall spacers to produce openings between each raised source-drain region and the gate stack; and
filling the openings with a dielectric material having a dielectric constant k<5, wherein the dielectric material having the dielectric constant k<5 is selected from the group consisting of: a silicon oxycarbonitride (SiOCN) material, a silicon carbon oxide (SiCO) material, a silicon carbon nitride (SiCN) and a silicon boron carbon nitride (SiBCN) material.
2. The process of claim 1 , wherein the sacrificial sidewall spacer is formed of a material having a dielectric constant k>5.
3. The process of claim 1 , wherein the sacrificial sidewall spacer is formed of a silicon nitride material.
4. The process of claim 1 , wherein the semiconductor layer is an upper layer of a silicon on insulator (SOI) substrate.
5. The process of claim 1 , further comprising siliciding an upper surface of the gate electrode.
6. The process of claim 1 , further comprising siliciding an upper surface of each raised source-drain region.
7. The process of claim 1 , wherein the gate electrode and raised source-drain regions are portions of a MOSFET.
8. A process, comprising:
defining a gate stack on top of a semiconductor layer, said gate stack including a gate dielectric and a gate electrode;
depositing a layer of a first dielectric material having a first dielectric constant on side walls of the gate stack to form sacrificial sidewall spacers;
epitaxially growing raised source-drain regions on each side of the gate stack adjacent the sacrificial sidewall spacers;
removing the sacrificial sidewall spacers to produce openings between each raised source-drain region and the gate stack; and
depositing a layer of a second dielectric material having a second dielectric constant less than the first dielectric constant in said openings and on side walls of the gate stack to form low-k sidewall spacers, wherein the second dielectric material is selected from the group consisting of: silicon oxycarbonitride (SiOCN), silicon carbon oxide (SiCO), silicon carbon nitride (SiCN) and silicon boron carbon nitride (SiBCN).
9. The process of claim 8 , wherein the first dielectric constant is k>5 and the second dielectric constant is k<5.
10. The process of claim 8 , wherein the first dielectric material is silicon nitride.
11. A process, comprising:
forming a gate stack on top of a semiconductor layer, said gate stack including a gate dielectric and a gate electrode;
forming a sacrificial sidewall spacer on each side of the gate stack;
epitaxially growing raised source-drain regions on each side of the gate stack adjacent the sacrificial sidewall spacers;
removing the sacrificial sidewall spacers to produce openings between each raised source-drain region and the gate stack; and
filling the openings with a dielectric material selected from the group consisting of: a silicon oxycarbonitride (SiOCN) material, a silicon carbon oxide (SiCO) material, a silicon carbon nitride (SiCN) and a silicon boron carbon nitride (SiBCN) material.
12. The process of claim 11 , wherein the semiconductor layer is an upper layer of a silicon on insulator (SOI) substrate.
13. The process of claim 11 , further comprising siliciding an upper surface of the gate electrode.
14. The process of claim 11 , further comprising siliciding an upper surface of each raised source-drain region.
15. The process of claim 11 , wherein the gate electrode and raised source-drain regions are portions of a MOSFET.