CROSSLINKED FLUOROPOLYMER CIRCUIT MATERIALS, CIRCUIT LAMINATES, AND METHODS OF MANUFACTURE THEREOF

1 . A circuit subassembly, comprising a conductive layer disposed on a dielectric layer, wherein the dielectric layer comprises a crosslinked fluoropolymer.

2 . The circuit subassembly of claim 1 , wherein the dielectric layer further comprises a particulate filler, glass reinforcement, or both.

3 . The circuit subassembly of claim 2 , wherein the particulate filler comprises silica, titania, or a combination comprising at least one of the foregoing.

4 . The circuit subassembly of claim 1 , wherein the fluoropolymer is a polymer of tetrafluoro ethylene, vinylidene fluoride, chlorotrifluoroethylene, perfluoroether, tetrafluoroethylene-perfluoropropylene vinyl ether, or a combination comprising at least one of the foregoing, optionally with a comonomer.

5 . The circuit subassembly of claim 4 , wherein the comonomer is perfluoromethyl vinyl ether, perfluoropropylene vinyl ether, hexafluoropropylene, perfluorobutyl ethylene, ethylene, propylene, butylene, or a combination comprising at least one of the foregoing.

6 . The circuit subassembly of claim 1 , wherein the fluoropolymer is polytetrafluoro ethylene, tetrafluoroethylene-perfluoropropylene vinyl ether copolymer, tetrafluoroethylene-hexafluoropropylene copolymer, ethylene-tetrafluoroethylene copolymer, polychlorotrifluoroethylene, polyvinylidene fluoride, polyvinyl fluoride, or a combination comprising at least one of the foregoing.

7 . The circuit subassembly of claim 6 , wherein the fluoropolymer is polytetrafluoro ethylene.

8 . The circuit subassembly of claim 1 , wherein the circuit subassembly is a circuit laminate.

9 . The circuit subassembly of claim 8 , further comprising a second conductive layer disposed on a side of the dielectric layer opposite the conductive layer.

10 . The circuit subassembly of claim 1 , wherein the circuit subassembly comprises a resin-coated conductive layer.

11 . The circuit subassembly of claim 1 , wherein the conductive layer is copper.

12 . The circuit subassembly of claim 1 , wherein the conductive layer is circuitized.

13 . The circuit subassembly of claim 1 , wherein the conductive layer is in direct contact with the dielectric layer.

14 . The circuit subassembly of claim 1 , further comprising a bond ply disposed between and in contact with the conductive layer and the dielectric substrate layer.

15 . The circuit subassembly of claim 14 , wherein the bond ply comprises a crosslinked fluoropolymer.

16 . A circuit comprising the circuit subassembly of claim 1 .

17 . A multi-layer circuit comprising the circuit subassembly of claim 1 .

18 . A method of making the circuit subassembly of claim 1 , the method comprising:

disposing a conductive layer on a dielectric substrate layer, wherein the dielectric layer comprises a crosslinked fluoropolymer; and

laminating the dielectric substrate layer and the conductive layer under heat and pressure.

19 . The method of claim 18 , wherein a bond ply is disposed between and in contact with the conductive layer and the dielectric layer before laminating.

20 . A circuit comprising the circuit subassembly formed by the method of claim 18 .