Precision measurement of voltage drop across a semiconductor switching element
An apparatus provides precision measurement of voltage drop across a semiconductor switching element of a subsea device. The apparatus includes (a) a first circuit path having a first protective element, a first impedance element and a voltage source, wherein the first circuit path is configured to be connected between the first terminal and the second terminal of the semiconductor switching element, (b) a second circuit path formed between a first output terminal and a second output terminal, the second circuit path having a second protective element and a second impedance element, wherein the second protective element is identical to the first protective element, and wherein the second impedance element is identical to the first impedance element, and (c) a regulating circuit configured to regulating the current in the second circuit path such that said current in the second circuit path is equal to the current in the first circuit path, wherein the voltage drop between the first terminal and the second terminal of the semiconductor switching element equals the difference between the voltage provided by the voltage source and the voltage drop between the first output terminal and the second output terminal.
1. An apparatus for measurement of a voltage drop between a first terminal and a second terminal of a semiconductor switching element, the apparatus comprising
a first circuit path comprising a first protective element, a first impedance element and a voltage source, wherein the first circuit path is configured to be connected between the first switch terminal and the second switch terminal of the semiconductor switching element,
a second circuit path formed between a first output terminal and a second output terminal, the second circuit path comprising a second protective element and a second impedance element, wherein the second protective element is substantially identical to the first protective element, and wherein the second impedance element is substantially identical to the first impedance element, and
a regulating circuit configured to regulate the current in the second circuit path such that said current in the second circuit path is equal to the current in the first circuit path,
wherein a voltage drop between the first switch terminal and the second switch terminal of the semiconductor switching element equals a difference between the voltage provided by the voltage source and a voltage drop between the first output terminal and the second output terminal.
2. The apparatus according to claim 1 , wherein the regulating circuit comprises:
a first measurement unit configured to measure the current in the first circuit path,
a second measurement unit configured to measure the current in the second circuit path, and
a regulator configured to regulate the current in the second circuit path in response to a difference between the currents measured by the first and second measurement units.
3. The apparatus according to claim 2 , wherein the regulating circuit further comprises a subtracting unit configured to calculate the difference between the currents measured by the first and second measurement units.
4. The apparatus according to claim 2 , wherein:
the first measurement unit is configured to measure the current in the first circuit path based on a voltage across the first impedance element, and
the second measurement unit is configured to measure the current in the second circuit path based on a voltage across the second impedance element.
5. The apparatus according to claim 1 , wherein the first protective element and the second protective element are identical diodes.
6. The apparatus according to claim 1 , wherein the first impedance element and the second impedance element are identical resistors.
7. The apparatus according to claim 1 , wherein the first protective element, the second protective element, the first impedance element, and the second impedance element are arranged to be exposed to identical environmental influences.
8. The apparatus according to claim 3 , wherein:
the first measurement unit is configured to measure the current in the first circuit path based on a voltage across the first impedance element, and
the second measurement unit is configured to measure the current in the second circuit path based on a voltage across the second impedance element.
9. The apparatus according to claim 8 , wherein the first protective element and the second protective element are identical diodes.
10. The apparatus according to claim 9 , wherein the first impedance element and the second impedance element are identical resistors.
11. A method of precision measurement of a voltage drop between a first terminal and a second terminal of a semiconductor switching element, the method comprising
providing a first circuit path comprising a first protective element, a first impedance element and a voltage source, wherein the first circuit path is adapted to be connected between the first terminal and the second terminal of the semiconductor switching element,
providing a second circuit path formed between a first output terminal and a second output terminal, the second circuit path comprising a second protective element and a second impedance element, wherein the second protective element is identical to the first protective element, and wherein the second impedance element is identical to the first impedance element, and
regulating, by a regulating circuit, the current in the second circuit path such that said current in the second circuit path is equal to the current in the first circuit path,
wherein a voltage drop between the first terminal and the second terminal of the semiconductor switching element equals a difference between the voltage provided by the voltage source and a voltage drop between the first output terminal and the second output terminal.
12. The apparatus according to claim 11 , wherein providing the first and second circuit paths with the first protective element and the second protective elements comprises providing diodes.
13. The apparatus according to claim 11 , wherein providing the first and second circuit paths with the first impedance element and the second impedance element comprises providing resistors.
14. The apparatus according to claim 1 , further comprising an adjustable speed drive of a subsea device, the adjustable speed drive comprising an insulated-gate bipolar transistor.
15. The apparatus according to claim 14 , further comprising:
a current measurement unit configured to measure the collector current of the insulated-gate bipolar transistor, and
a voltage measurement unit configured to measure the collector-emitter voltage of the insulated-gate bipolar transistor based on the voltage drop between the first output terminal and the second output terminal.
16. The apparatus according to claim 14 wherein the regulating circuit is configured to regulate the current in the second circuit path in response to a difference between measured currents.
17. The apparatus of claim 14 , further comprising:
a communication unit for communicating with the subsea device,
a memory unit, and
a processor configured to receive corresponding measured values of collector current and collector-emitter voltage from the subsea device and to determine an aging state of the insulated-gate bipolar transistor based on a comparison of the received measured values and predetermined values of collector current and collector-emitter voltage stored in the memory unit.