IP Library Granted Patent US 9,585,237
Granted Patent B2
US 9,585,237 · App. 14/682,810 · Granted Feb 28, 2017

Micro-structured atomic source system

Inventors: James Goeders (Plymouth, MN); Matthew S. Marcus (Plymouth, MN); Thomas Ohnstein (Roseville, MN); Terry Dean Stark (St. Louis Park, MN)
Assignee: Honeywell International Inc.
H05H3/02
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Quick Facts
Patent No.
US 9,585,237
App. No.
14/682,810
Granted
Feb 28, 2017
Kind
B2
Abstract

A micro-structured atomic source system is described herein. One system includes a silicon substrate, a dielectric diaphragm, wherein the dielectric diaphragm includes a heater configured to heat an atomic source substance, an intermediary material comprising a chamber configured to receive the atomic source substance, and a guide material configured to direct a flux of atoms from the atomic source substance.

Claims (31)

1. A micro-structured atomic source system, comprising:

a silicon substrate;

a dielectric diaphragm, wherein the dielectric diaphragm includes a heater configured to heat an atomic source substance;

an intermediary material comprising a chamber with an opening configured to receive the atomic source substance; and

a guide material partially covering the opening of the chamber, the guide material configured to direct a flux of atoms from the atomic source substance.

2. The micro-structured atomic source system of claim 1 , wherein the heater is configured to sublimate the atomic source substance.

3. The micro-structured atomic source system of claim 1 , wherein the atomic source substance is adjacent to the heater.

4. The micro-structured atomic source system of claim 1 , wherein the atomic source substance is a thin-film substance.

5. The micro-structured atomic source system of claim 1 , wherein the atomic source substance is a granular substance.

6. The micro-structured atomic source system of claim 1 , wherein the silicon substrate is adjacent to the dielectric diaphragm.

7. The micro-structured atomic source system of claim 1 , wherein the silicon substrate includes a channel.

8. The micro-structured atomic source system of claim 7 , wherein the channel is configured to thermally isolate the dielectric diaphragm.

9. The micro-structured atomic source system of claim 1 , wherein the dielectric diaphragm further includes a number of temperature sensors.

10. The micro-structured atomic source system of claim 1 , wherein the dielectric diaphragm is adjacent to the intermediary material.

11. The micro-structured atomic source system of claim 1 , wherein the guide material is adjacent to the intermediary material and includes an opening configured to direct the flux of atoms from the atomic source substance.

12. The micro-structured atomic source system of claim 11 , wherein a dimension of the opening of the guide material is selected to direct the flux of atoms from the atomic source sub stance.

13. The micro-structured atomic source system of claim 1 , wherein a quantity of the atoms is controlled by current supplied to the heater.

14. A method for operating a micro-structured atomic source system, comprising:

receiving, through an opening in a chamber located in an intermediary material, an atomic source substance;

heating, via a heater located in a dielectric diaphragm, the atomic source substance such that the atomic source substance sublimates to produce a flux of atoms; and

directing, via an opening located in a guide material partially covering the opening of the chamber, the flux of atoms.

15. The method of claim 14 , wherein the method includes controlling the flux of atoms by controlling a current supplied to the heater.

16. The method of claim 14 , wherein the method includes receiving the atomic source substance by the chamber via a shadow mask.

17. A micro-structured atomic source system, comprising:

a silicon substrate comprising one or more channels;

a dielectric diaphragm located adjacent to the silicon substrate, wherein the dielectric diaphragm includes a plurality of heaters each configured to heat a different one of a plurality of atomic source substances, wherein each different atomic source substance is located adjacent to its respective heater;

an intermediary material located adjacent to the silicon substrate and the dielectric diaphragm, comprising a plurality of chambers each including an opening, wherein each of the plurality of chambers are configured to receive a different one of the atomic source substances; and

a guide material located adjacent to the intermediary material, comprising a plurality of openings each configured to direct a flux of atoms from a different one of the atomic source substances, wherein the guide material partially covers each of the plurality of openings of each of the plurality of chambers.

18. The micro-structured atomic source system of claim 17 , wherein different ones of the plurality of atomic source substances are located in different chambers.

19. The micro-structured atomic source system of claim 17 , wherein the plurality of heaters are operated independently.

20. The micro-structured atomic source system of claim 17 , wherein the plurality of heaters are operated simultaneously.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2022
From: HONEYWELL INTERNATIONAL INC.
To: HONEYWELL HELIOS LLC
Reel/Frame 058963/0120 →
CHANGE OF NAME Recorded Feb 7, 2022
From: HONEYWELL HELIOS LLC
To: QUANTINUUM LLC
Reel/Frame 058963/0166 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2015
From: GOEDERS, JAMES; MARCUS, MATTHEW S.; OHNSTEIN, THOMAS; STARK, TERRY DEAN
To: HONEYWELL INTERNATIONAL INC.
Reel/Frame 035445/0638 →
Continuity (1)
Related Publication 20160302296A1 · Oct 13, 2016