MEMS microphone
Mechanical resonating structures, as well as related devices and methods of manufacture. The mechanical resonating structures can be microphones, each including a diaphragm and a piezoelectric stack. The diaphragm can have one or more openings formed therethrough to enable the determination of an acoustic pressure being applied to the diaphragm through signals emitted by the piezoelectric stack.
1. An electroacoustic device, comprising:
a substrate having a cavity formed therein;
a diaphragm disposed over the cavity in the substrate, the diaphragm being configured to vibrate in response to an acoustic pressure applied thereto; and
a piezoelectric stack disposed in proximity to the diaphragm, the piezoelectric stack being configured to sense the acoustic pressure applied to the diaphragm.
2. The electroacoustic device of claim 1 wherein the electroacoustic device is connectable to an integrated circuit to form one of a top port wafer-level chip-scale package (WLCSP) configuration and a bottom port WLCSP configuration.
3. The electroacoustic device of claim 1 wherein the diaphragm comprises one or more of silicon (Si), silicon dioxide (SiO 2 ), silicon nitride (SiN), and silicon carbide (SiC).
4. The electroacoustic device of claim 1 wherein the piezoelectric stack comprises a first metal layer and a piezoelectric layer, wherein the piezoelectric layer comprises one or more of aluminum nitride (AlN), zinc oxide (ZnO), cadmium sulfide (CdS), quartz, lead titanate (PbTiO 3 ), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), and lithium tantalate (LiTaO 3 ), and wherein the first metal layer comprises one or more of aluminum (Al), molybdenum (Mo), titanium (Ti), chromium (Cr), ruthenium (Ru), gold (Au), platinum (Pt), and AlSiCu.
5. The electroacoustic device of claim 1 wherein the electroacoustic device is one of a microphone and a speaker.
6. The electroacoustic device of claim 4 wherein the piezoelectric stack further comprises a second metal layer, wherein the second metal layer comprises one or more of aluminum (Al), molybdenum (Mo), titanium (Ti), chromium (Cr), ruthenium (Ru), gold (Au), platinum (Pt), and AlSiCu.
7. An electroacoustic device, comprising:
a substrate having a cavity formed therein;
a diaphragm disposed over the cavity in the substrate, the diaphragm being configured to vibrate in response to an acoustic pressure applied thereto; and
a piezoelectric stack disposed in proximity to the diaphragm, the piezoelectric stack being configured to sense the acoustic pressure applied to the diaphragm,
wherein the diaphragm has variable thickness.
8. An electroacoustic device, comprising:
a substrate having a cavity formed therein;
a diaphragm disposed over the cavity in the substrate, the diaphragm being configured to vibrate in response to an acoustic pressure applied thereto; and
a piezoelectric stack disposed in proximity to the diaphragm, the piezoelectric stack being configured to sense the acoustic pressure applied to the diaphragm,
wherein the diaphragm has one or more openings formed therethrough.
9. The electroacoustic device of claim 8 wherein the piezoelectric stack is configured as a ring surrounding the one or more openings in the diaphragm.
10. The electroacoustic device of claim 8 wherein the one or more openings in the diaphragm are circular openings.
11. The electroacoustic device of claim 8 wherein the one or more openings in the diaphragm define a plurality of cantilevers in the diaphragm.
12. The electroacoustic device of claim 8 wherein the one or more openings in the diaphragm are disposed in a symmetrical pattern.
13. The electroacoustic device of claim 8 wherein the one or more openings in the diaphragm are non-circular openings.
14. The electroacoustic device of claim 8 wherein the one or more openings in the diaphragm are disposed in an asymmetrical pattern.
15. An electroacoustic device, comprising:
a substrate having a cavity formed therein; and
a piezoelectric stack disposed over the cavity in the substrate, the piezoelectric stack being configured to generate an electrical signal in response to an acoustic pressure applied thereto,
wherein the piezoelectric stack is connectable to a conductor, and
wherein the piezoelectric stack is further configured to provide the electrical signal to the conductor for determining the acoustic pressure applied to the piezoelectric stack.
16. The electroacoustic device of claim 15 wherein the electroacoustic device is one of a microphone and a speaker.
17. An electroacoustic device, comprising:
a substrate having a cavity formed therein; and
a piezoelectric stack disposed over the cavity in the substrate, the piezoelectric stack being configured to generate an electrical signal in response to an acoustic pressure applied thereto,
wherein the piezoelectric stack is connectable to a conductor,
wherein the piezoelectric stack is further configured to provide the electrical signal to the conductor for determining the acoustic pressure applied to the piezoelectric stack, and
wherein the piezoelectric stack has one or more openings formed therethrough to facilitate generation of the electrical signal in response to the applied acoustic pressure.
18. A pressure sensor, comprising:
a substrate having a cavity formed therein;
a diaphragm disposed over the cavity in the substrate, the diaphragm being configured to move in response to a pressure applied thereto; and
a piezoelectric stack configured to sense the pressure applied to the diaphragm.
19. The pressure sensor of claim 18 wherein the diaphragm and the piezoelectric stack are configured as a unitary component.
20. A pressure sensor, comprising:
a substrate having a cavity formed therein;
a diaphragm disposed over the cavity in the substrate, the diaphragm being configured to move in response to a pressure applied thereto; and
a piezoelectric stack configured to sense the pressure applied to the diaphragm,
wherein the diaphragm has one or more openings formed therethrough to facilitate movement in response to the applied pressure.