Method of manufacturing display device
A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.
1. A method of manufacturing a display device, comprising:
forming a gate electrode on a substrate;
forming a gate insulating film on the substrate having the gate electrode formed thereon;
forming an oxide semiconductor on the substrate having the gate insulating film formed thereon;
forming a source electrode and a drain electrode on the substrate having the oxide semiconductor formed thereon;
forming a passivation film on the substrate having the source electrode and the drain electrode formed thereon;
forming a common electrode on the substrate having the passivation film formed thereon;
forming an interlayer insulating film on the substrate having the common electrode formed thereon;
forming a pixel electrode on the substrate having the interlayer insulating film formed thereon;
forming an alignment film on the substrate having the pixel electrode formed thereon;
radiating UV-rays onto the oxide semiconductor;
heat-treating the oxide semiconductor irradiated with the UV-rays; and
bonding together the substrate and an opposing substrate opposing the substrate, wherein the radiating UV-rays is included in the forming an alignment film,
the forming an alignment film is performed by photoalignment, and
the radiating UV-rays and the heat-treating the oxide semiconductor are performed before the bonding together the substrate and an opposing substrate opposing the substrate.
2. The method of manufacturing a display device according to claim 1 , wherein the heat-treating is performed at a temperature range from 200° C. to 400° C.
3. The method of manufacturing a display device according to claim 1 , wherein the heat-treating the oxide semiconductor irradiated with the UV-rays is performed using the UV-rays having a wavelength of from 200 to 400 nm.
4. The method of manufacturing a display device according to claim 1 , wherein the heat-treating the oxide semiconductor irradiated with the UV-rays is performed under a state in which a cumulative amount of the UV-rays is from 50 mJ to 1,000 mJ.
5. The method of manufacturing a display device according to claim 1 , further comprising forming a channel protective film on the substrate having the oxide semiconductor formed thereon.