Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.
1. A semiconductor device comprising a rectangular semiconductor chip,
wherein the semiconductor chip includes:
(a) a plurality of pads arranged along an edge side of the semiconductor chip;
(b) a lead-out wiring portion provided on each of the plurality of pads; and
(c) a sloped portion provided on a connecting part between each of the plurality of pads and the lead-out wiring portion, and
wherein the lead-out wiring portion is connected to a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of pads.
2. The semiconductor device according to claim 1 ,
wherein each of the plurality of pads, the lead-out wiring portion, and the sloped portion are formed integrally together.
3. The semiconductor device according to claim 1 ,
wherein a width of the lead-out wiring portion is smaller than a length of a side to which the lead-out wiring portion is connected among a plurality of sides making up each of the plurality of pads.
4. The semiconductor device according to claim 3 ,
wherein the sloped portions are formed on both sides of the lead-out wiring portion, respectively.
5. The semiconductor device according to claim 1 , comprising:
(d) a surface protective film covering each of the plurality of pads, the lead-out wiring portion, and the sloped portion,
wherein the surface protective film has an opening that exposes a part of a surface of each of the plurality of pads.
6. A semiconductor device comprising a rectangular semiconductor chip,
wherein the semiconductor chip includes:
(a) a plurality of pads arranged along an edge side of the semiconductor chip;
(b) a lead-out wiring portion provided on each of the plurality of pads;
(c) a sloped portion provided on a connecting part between each of the plurality of pads and the lead-out wiring portion; and
(d) a surface protective film covering each of the plurality of pads, the lead-out wiring portion, and the sloped portion,
wherein the surface protective film has an opening that exposes a part of a surface of each of the plurality of pads, and
wherein a central position of the opening is shifted in an inward direction of the semiconductor chip, relative to a central position of each of the plurality of pads.
7. A semiconductor device comprising a rectangular semiconductor chip,
wherein the semiconductor chip includes:
(a) a plurality of pads arranged along an edge side of the semiconductor chip;
(b) a lead-out wiring portion provided on each of the plurality of pads;
(c) a sloped portion provided on a connecting part between each of the plurality of pads and the lead-out wiring portion; and
(d) a surface protective film covering each of the plurality of pads, the lead-out wiring portion, and the sloped portion,
wherein the surface protective film has an opening that exposes a part of a surface of each of the plurality of pads, and
wherein a width of a coating area of the surface protective film that covers a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of pads is larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip.
8. The semiconductor device according to claim 7 ,
wherein at a first pad closest to a corner of the semiconductor chip among the plurality of pads, a width of a coating area of the surface protective film that covers a side closest to the corner of the semiconductor chip among a plurality of sides making up the first pad is also larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip.
9. A semiconductor device comprising a rectangular semiconductor chip,
wherein the semiconductor chip includes:
(a) a plurality of pads arranged along an edge side of the semiconductor chip;
(b) a lead-out wiring portion provided on each of the plurality of pads; and
(c) a sloped portion provided on a connecting part between each of the plurality of pads and the lead-out wiring portion,
wherein the plurality of pads include:
(a1) a plurality of outer pads located closer to the edge side of the semiconductor chip and disposed along the edge side; and
(a2) a plurality of inner pads located farther to the edge side of the semiconductor chip and disposed along the edge side.
10. The semiconductor device according to claim 9 ,
wherein at the plurality of inner pads, the lead-out wiring portion is provided so as to be connected to a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of inner pads, and the sloped portion is provided on a connecting part between each of the plurality of inner pads and the lead-out wiring portion.
11. The semiconductor device according to claim 10 ,
wherein at the plurality of outer pads, the lead-out wiring portion is provided so as to be connected to a side farthest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of outer pads.
12. The semiconductor device according to claim 11 ,
wherein the sloped portion is not provided on a connecting part between each of the plurality of outer pads and the lead-out wiring portion.
13. The semiconductor device according to claim 11 ,
wherein the sloped portion is provided on a connecting part between each of the plurality of outer pads and the lead-out wiring portion.
14. The semiconductor device according to claim 13 ,
wherein the sloped portion provided on a connecting part between each of the plurality of outer pads and the lead-out wiring portion is smaller in size than the sloped portion provided on a connecting part between each of the plurality of inner pads and the lead-out wiring portion.
15. The semiconductor device according to claim 9 , comprising:
(d) a surface protective film covering each of the plurality of pads, the lead-out wiring portion, and the sloped portion,
wherein the surface protective film has an opening that exposes a part of a surface of each of the plurality of pads, and
at each of the plurality of outer pads, a central position of the opening is shifted in an inward direction of the semiconductor chip relative to a central position of each of the plurality of outer pads, while at each of the plurality of inner pads, a central position of the opening matches a central position of each of the plurality of inner pads.
16. The semiconductor device according to claim 9 , comprising:
(d) a surface protective film covering each of the plurality of pads, the lead-out wiring portion, and the sloped portion,
wherein the surface protective film has an opening that exposes a part of a surface of each of the plurality of pads,
a width of a coating area of the surface protective film that covers a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of outer pads is larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip, and
at a first outer pad closest to a corner of the semiconductor chip among the plurality of outer pads, a width of a coating area of the surface protective film that covers a side closest to the corner of the semiconductor chip among a plurality of sides making up the first outer pad is also larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip.
17. The semiconductor device according to claim 16 ,
wherein a width of a coating area of the surface protective film that covers a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of inner pads is larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip, and
at a first inner pad closest to a corner of the semiconductor chip among the plurality of inner pads, a width of a coating area of the surface protective film that covers a side closest to the corner of the semiconductor chip among a plurality of sides making up the first inner pad is also larger than a width of a coating area of the surface protective film that covers a side farthest to the edge side of the semiconductor chip.