Semiconductor device
View Patent ↗A semiconductor device 1 is provided with a semiconductor substrate 10 , an electrode 30 formed on a surface of the semiconductor substrate 10 , and an insulation film 20 formed on the electrode 30 . The semiconductor device 1 includes a metal film 40 extending over a part of the surface of the electrode 30 not covered by the insulation film 20 and a surface of the insulation film 20 . The semiconductor device 1 includes solder 80 formed on a surface of the metal film 40 , a lead frame 50 joined to the metal film 40 by the solder 80 , and sealing resin 60 sealing the insulation film 20 , the metal film 40 , and the solder 80 . A convex 70 is formed on the surface of the insulation film 20 . The metal film 40 covers the convex 70 . The solder 80 covers the metal film 40 covering the convex 70.
1. A semiconductor device comprising:
a substrate including a semiconductor substrate; an electrode formed on a surface of the semiconductor substrate;
an insulation film formed on a part of a surface of the electrode;
a metal film extending over a part of a surface of the electrode not covered by the insulation film and over a boundary portion of the insulation film;
a solder formed on a surface of the metal film;
a lead frame directly joined to the metal film by the solder; and
sealing resin sealing the insulation film, the metal film, and the solder,
wherein a convex is formed on the boundary portion of the insulation film, the convex having a peak at a ridge of the boundary portion of the insulation film,
the metal film covering the convex, and
the solder covering the metal film covering the convex.
2. The semiconductor device according to claim 1 , wherein
the insulation film is made of polyimide.
3. The semiconductor device according to claim 1 , wherein
the convex is formed on the boundary portion at an edge surface of the insulation film.