Organic light emitting diode with surface modification layer
View Patent ↗An organic light emitting diode ( 10 ) includes a substrate ( 12 ) having a first surface ( 14 ) and a second surface ( 16 ), a first electrode ( 32 ), and a second electrode ( 38 ). An emissive layer ( 36 ) is located between the first electrode ( 32 ) and the second electrode ( 38 ). The organic light emitting diode ( 10 ) further includes a surface modification layer ( 18 ). The surface modification layer ( 18 ) includes a non-planar surface ( 30, 52 ).
1. An organic light emitting diode, comprising:
a substrate having a first surface and a second surface;
a first electrode;
a second electrode;
an emissive layer located between the first electrode and the second electrode; and
a surface modification layer located between the first electrode and the substrate comprising a multilayer structure comprising a first film over at least a portion of the substrate and a second film over at least a portion of the first film,
wherein the second film is formed by MSVD in an oxygen atmosphere.
2. The organic light emitting diode of claim 1 , wherein the first film has a first coefficient of expansion, the second film has a second coefficient of expansion, and the first coefficient of expansion is greater than the second coefficient of expansion.
3. The organic light emitting diode of claim 1 , wherein the first film comprises a polymeric material.
4. The organic light emitting diode of claim 1 , wherein the first film comprises polydimethylsiloxane.
5. The organic light emitting diode of claim 1 , wherein the second film comprises an inorganic film.
6. The organic light emitting diode of claim 1 , wherein the second film is thinner than the first film.
7. The organic light emitting diode of claim 1 , wherein the first film is formed by a wet deposition method selected from the group consisting of spin coating, spray coating, flow coating, slot-die coating, and curtain coating.
8. The organic light emitting diode of claim 1 , wherein the surface modification layer includes nanoparticles incorporated therein.
9. The organic light emitting diode of claim 1 , wherein the second film comprises an oxide or oxynitride containing a metal selected from the group consisting of Zn, Fe, Mn, Al, Ce, Sn, Sb, Hf, Zr, NI, Zn, Bi, Ti, Co, Cr, Si, In, and combinations thereof.
10. The organic light emitting diode of claim 1 , wherein the second film comprises alumina and silica.
11. An organic light emitting diode, comprising:
a substrate having a first surface and a second surface;
a first electrode;
a second electrode;
an emissive layer located between the first electrode and the second electrode; and
a surface modification layer comprising a non-planar surface located between the first electrode and the substrate,
wherein the surface modification layer comprises a multilayer structure comprising a first film over at least a portion of the substrate having a first coefficient of expansion over at least a portion of the substrate and a second film over at least a portion of the first film having a second coefficient of expansion over at least a portion of the first film, and wherein the first coefficient of expansion is greater than the second coefficient of expansion, and
wherein the second film is formed by MSVD in an oxygen atmosphere.
12. The organic light emitting diode of claim 11 , wherein the first film comprises a polymeric material.
13. The organic light emitting diode of claim 11 , wherein the first film comprises polydimethylsiloxane.
14. The organic light emitting diode of claim 11 , wherein the second film is thinner than the first film.
15. The organic light emitting diode of claim 11 , wherein the surface modification layer includes nanoparticles incorporated therein.
16. The organic light emitting diode of claim 11 , wherein the second film comprises alumina and silica.
17. The organic light emitting diode of claim 11 , wherein the second film comprises an inorganic material.
18. The organic light emitting diode of claim 17 , wherein the inorganic material comprises a metal oxide.
19. A method of making an organic light emitting diode, comprising the steps of:
forming a surface modification layer over at least a portion of a substrate;
causing the surface modification layer to expand and contract to provide the surface modification layer with a non-planar surface; and
forming additional layers comprising a first electrode, an emissive layer, and a second electrode, over the surface modification layer such that at least one of the additional layers includes a non-planar surface
wherein the surface modification layer comprises a first film and a second film, wherein the first film has a greater coefficient of expansion than the second film, and the method comprises:
forming the first film over at least a portion of the substrate;
increasing a surface area of the first film from a first surface area to a second surface area;
forming the second film over the first film while the first film has a surface
area greater than the first surface area; and
causing the first film to contract such that the second film has a non-planar surface.