According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.
1. A storage device, comprising:
a first electrode;
a second electrode;
a resistance change layer disposed between the first electrode and the second electrode; and
a plurality of islands that are disposed between the first electrode and a surface of the resistance change layer, the plurality of islands each comprising a metal selected from a group consisting of silver, aluminum, copper, nickel or compounds thereof, wherein
the first electrode comprises a material selected from the group consisting of titanium, titanium nitride, tantalum nitride and tungsten nitride, and
the first electrode is in contact with the surface of the resistance change layer at regions that are not covered by the plurality of islands.
2. The storage device of claim 1 , wherein the metal comprises silver.
3. The storage device of claim 1 , wherein the metal comprises aluminum.
4. The storage device of claim 1 , wherein the metal comprises copper.
5. The storage device of claim 1 , wherein the resistance change layer comprises a material selected from the group consisting of silicon, silicon oxide, silicon nitride, hafnium oxide, zirconium oxide.
6. The storage device of claim 1 , wherein the resistance change layer comprises silicon oxide.
7. The storage device of claim 1 , wherein an amount of the metal that is disposed between the resistance change layer and the first electrode is 5 nm or less.
8. The storage device of claim 1 , wherein
the first electrode includes a first wiring that extends in a first direction, and a conductive layer that is provided between the first wirings and the resistance change layer, and is in contact with the ion metal particles and the resistance change layer, and
the second electrode includes a second wiring that extends in a second direction that intersects with the first direction.
9. The storage device of claim 1 , further comprising:
a current limiting layer that is formed of a material having electric resistivity higher than electric resistivity of the metal, and that is provided between the second electrode and the resistance change layer.
10. The storage device of claim 1 , further comprising:
a layer that is formed of a material selected from the group consisting of silicon, aluminum nitride, and tantalum silicon nitride, and that is provided between the second electrode and the resistance change layer.
11. A storage device, comprising:
a first electrode;
a second electrode;
a resistance change layer disposed between the first electrode and the second electrode; and
a plurality of islands that are disposed between the first electrode and a surface of the resistance change layer, the plurality of islands each comprising a metal selected from a group consisting of silver, aluminum, copper, nickel or compounds thereof, wherein
the first electrode comprises tungsten nitride, and
the first electrode is in contact with the surface of the resistance change layer at regions that are not covered by the plurality of islands.
12. The storage device of claim 11 , wherein the metal comprises silver.
13. The storage device of claim 11 , wherein the metal comprises aluminum.
14. The storage device of claim 11 , wherein the metal comprises copper.
15. The storage device of claim 11 , wherein the resistance change layer comprises a material selected from the group consisting of silicon, silicon oxide, silicon nitride, hafnium oxide, zirconium oxide.
16. The storage device of claim 11 , wherein the resistance change layer comprises silicon oxide.
17. The storage device of claim 11 , wherein an amount of the metal that is disposed between the resistance change layer and the first electrode is 5 nm or less.
18. The storage device of claim 11 , wherein
the first electrode includes a first wiring that extends in a first direction, and a conductive layer that is provided between the first wirings and the resistance change layer, and is in contact with the ion metal particles and the resistance change layer, and
the second electrode includes a second wiring that extends in a second direction that intersects with the first direction.
19. The storage device of claim 11 , further comprising:
a current limiting layer that is formed of a material having electric resistivity higher than electric resistivity of the metal, and that is provided between the second electrode and the resistance change layer.
20. The storage device of claim 11 , further comprising:
a layer that is formed of a material selected from the group consisting of silicon, aluminum nitride, and tantalum silicon nitride, and that is provided between the second electrode and the resistance change layer.