Method of making graphene layers, and articles made thereby
View Patent ↗There is provided a method for forming a graphene layer. The method includes forming an article that comprises a carbon-containing self-assembled monolayer (SAM). A layer of nickel is deposited on the SAM. The article is heated in a reducing atmosphere and cooled. The heating and cooling steps are carried out so as to convert the SAM to a graphene layer.
1. A method comprising:
depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate;
allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and
heating the SAM layer to convert it to a layer of grapheme, wherein
at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and
at least one p-n, p-i, or n-i semiconductor junction is formed between the grapheme regions.
2. The method of claim 1 , wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing.
3. An article formed by the method of claim 1 .
4. The method of claim 1 , further comprising:
applying nickel on the SAM layer.
5. The method of claim 1 , wherein the depositing step is spatially selective on the substrate.
6. The method of claim 5 , further comprising:
depositing a second layer of amphiphilic compounds having two or more different chemical compositions onto the substrate.
7. The method of claim 1 , further comprising:
removing the substrate from the graphene layer.
8. The method of claim 7 , wherein a second layer is deposited directly on the substrate adjacent regions including the SAM layer.
9. The method of claim 7 , wherein the depositing step is spatially non-selective.
10. The method of claim 1 , wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
11. The method of claim 10 , wherein the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.
12. The method of claim 1 , wherein
at least one of the amphiphilic compounds comprises an n-type dopant element,
at least one of the other amphiphilic compounds comprises a p-type dopant element, and
at least one p-n semiconductor junction is formed between the graphene regions.
13. A method comprising:
depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate;
allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and
heating the SAM layer to convert it to a layer of graphene, wherein
at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and
at least one dopant gradient is formed between the graphene regions.
14. The method of claim 13 , wherein
at least one p-n, p-i, or n-i semiconductor junction is formed between the grapheme regions.
15. The method of claim 14 , wherein
at least one of the amphiphilic compounds comprises an n-type dopant element,
at least one of the other amphiphilic compounds comprises a p-type dopant element, and
at least one p-n semiconductor junction is formed between the graphene regions.
16. The method of claim 13 , wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing.
17. A method comprising:
depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate;
allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; an
heating the SAM layer to convert it to a layer of graphene,
wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
18. The method of claim 17 , wherein
at least one of the amphiphilic compounds comprises an n-type or p-type dopant element,
at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions,
at least one of the amphiphilic compounds comprises an n-type dopant element,
at least one of the other amphiphilic compounds comprises a p-type dopant element, and
at least one p-n semiconductor junction is formed between the graphene regions.
19. The method of claim 17 , wherein
at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and
at least one dopant gradient is formed between the graphene regions.
20. The method of claim 17 , the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.