IP Library Granted Patent US 9,673,353
Granted Patent B2
US 9,673,353 · App. 14/694,602 · Granted Jun 6, 2017

Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

Inventors: Jun-Rong Chen (Taichung, TW); Hsiu-Mei Chou (Hsinchu, TW); Jhao-Cheng Ye (Yunlin County, TW)
Assignee: Lextar Electronics Corporation
H01L33/20C30B23/04C30B25/04C30B29/406H01L21/0254H01L21/0265H01L21/02458H01L21/02639H01L33/007H01L33/02H01L33/12
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,673,353
App. No.
14/694,602
Granted
Jun 6, 2017
Kind
B2
Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

Claims (6)

1. An epitaxial structure, comprises:

a substrate having a surface;

a first epitaxial layer disposed over the substrate, wherein the first epitaxial layer includes a plurality of cavities that exposes the surface; and

a second epitaxial layer disposed on the first epitaxial layer, wherein the second epitaxial layer has a plurality of concave portions, and each of the cavities and each of the concave portions are aligned to define an air void in a shape of trapezoid with the surface.

2. The epitaxial structure according to claim 1 , wherein a top portion of the air void is the concave portion of the second epitaxial layer and comprises three facets, and a bottom portion of the air void is the cavity of the first epitaxial layer.

3. The epitaxial structure according to claim 1 , wherein the air void has a height of about 0.5 μm to about 3 μm, the bottom portion of the air void has a width of about 0.5 μm to about 5 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2015
From: CHEN, JUN-RONG; CHOU, HSIU-MEI; YE, JHAO-CHENG
To: LEXTAR ELECTRONICS CORPORATION
Reel/Frame 035613/0941 →
Priority Claims (1)
TW 101124450 A · Jul 6, 2012 · national
Continuity (2)
Continuation 13932665 · Jul 1, 2013
Related Publication 20150228853A1 · Aug 13, 2015