Beam steering modulated VCSEL

1. A VCSEL comprising:

an electro-optic modulator between a lasing active region and a light emitting surface, the electro-optic modulator comprising:

an electro-optically active region;

a modulator mirror region over the electro-optically active region; and

at least one electrical insulator region located in the modulator mirror region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity.

2. The VCSEL of claim 1 , wherein at least one electrical insulator region includes an electrical insulator trench having an electrical insulator material that is different from the mirror cavities.

3. The VCSEL of claim 2 , wherein the electrical insulator material of the electrical insulator trench is selected from the group consisting of air, silicon nitride, silicon dioxide, BCB, photoresist, titania or combination thereof.

4. The VCSEL of claim 1 , wherein at least one electrical insulator region includes an electrical insulator implant region, wherein the electrical implant region is implanted with a material that causes the electrical implant region to be electrically insulating.

5. The VCSEL of claim 4 , wherein the implant region is implanted with protons and/or helium.

6. The VCSEL of claim 1 , wherein each modulator mirror cavity has a modulator electrode.

7. The VCSEL of claim 1 , wherein the at least two separate modulator mirror cavities are laterally disposed with respect to each other and relative to a longitudinal axis of emitted light.

8. The VCSEL of claim 1 : the electro-optic modulator comprising:

the modulator mirror region having a top and a bottom; and

the at least one electrical insulator region extending from the top to the bottom of the modulator mirror region.

9. The VCSEL of claim 1 , comprising:

a delay wave-plate over at least one of the separate modulator mirror cavities, the delay wave-plate providing a delay of ¼ wave or factor thereof, and

at least one of the separate modulator mirror cavities being devoid of a delay wave-plate thereover.

10. The VCSEL of claim 9 , comprising a delay wave-plate over diagonally located separate modulator mirror cavities when four or more separate modulator mirror cavities are included.

11. The VCSEL of claim 1 , comprising the electro-optic modulator in a mesa region of the VCSEL and the lasing active region being in a base region having a shoulder, the base region having the shoulder being under the mesa region.

12. The VCSEL of claim 1 , comprising more than two separate modulator mirror cavities separated by the at least one electrical insulator region.

13. A method of manufacturing the VCSEL of claim 1 , the method comprising:

forming a semiconductor structure having the lasing active region and a middle mirror region over the lasing active region;

forming the electro-optically active region over the middle mirror region; forming the modulator mirror region over the electro-optically active region so as to have a top having or being associated with the light emitting surface and to have a bottom; and

forming the at least one electrical insulator region so as to be located in the modulator mirror region so as to split the modulator mirror region into the at least two modulator mirror cavities.

14. The method of claim 13 , comprising:

removing a portion of the modulator mirror region from the top to the bottom so as to form a trench between the at least two separate modulator mirror cavities; and

filling the trench with an electrical insulator material so as to form the at least one electrical insulator region in the trench.

15. The method of claim 14 , comprising:

forming the one or more insulator regions by implanting a substance of the modulator mirror region so as to form an implant isolator.

16. A method of emitting light from a VCSEL, the method comprising:

providing a VCSEL of claim 1 ;

emitting a laser beam from the lasing active region along a longitudinal axis; and

changing a refractive index of one electro-optic modulator cavity so as to steer the laser beam from the longitudinal axis.

17. The method of claim 16 , comprising selectively biasing the one electro-optic modulator cavity so as to change the refractive index thereof relative to one or more other electro-optic modulator cavities.

18. The method of claim 17 , comprising selectively biasing one modulator mirror cavity and a portion of the electro-optically active region that is longitudinally aligned with the biased modulator mirror cavity so as to change the refractive index relative.

19. The method of claim 17 , comprising applying an opposite bias to one or more other electro-optic modulator cavities.

20. The method claim 16 , comprising steering the laser beam by at least degrees.

21. The method of claim 16 , wherein a delay wave-plate is included over the one electro-optic modulator cavity, wherein the delay wave-plate further steers the laser beam from the longitudinal axis.

22. The method of claim 16 , comprising:

providing a VCSEL having four or more electro-optic modulator cavities; and

biasing diagonally-opposed electro-optic modulator cavities with a first bias without biasing other electro-optic modulator cavities with the first bias.

23. The method of claim 22 , comprising biasing other electro-optic modulator cavities with a second bias while biasing the diagonally-opposed electro-optic modulator cavities with the first bias, wherein the second bias is opposite of the first bias.

24. The method of claim 16 , comprising:

providing a VCSEL having a delay wave-plate over one or more of the electro-optic modulator cavities; and

phase shifting light emitted from one or more of the electro-optic modulator cavities compared to other one or more of the electro-optic modulator cavities.

25. The method of claim 24 , comprising converting the fundamental mode to at least a first angular mode.

26. The method of claim 25 , comprising converting the fundamental mode to at least a second angular mode.

27. The method of claim 24 , wherein the phase shifting is about 180 degrees.

28. The method of claim 16 , comprising:

providing a VCSEL having a delay wave-plate over one or more of the electro-optic modulator cavities; and

compensating for the delay wave-plate by an applied field to the electro-optic modulator to obtain about 0 phase change.

29. A VCSEL comprising:

an electro-optic modulator between a lasing active region and a light emitting surface, the electro-optic modulator comprising:

an electro-optically active region;

a modulator mirror region over the electro-optically active region;

at least one insulator region located in the modulator mirror region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity, wherein the electro-optic modulator is configured for:

modulating bias on one of the electro-optic modulator cavities to change the refractive index of the one electro-optic modulator cavity;

varying slope efficiency with applied bias to one of the electro-optic modulator cavities while current bias applied to a primary VCSEL cavity is modulated to keep photon density in a primary VCSEL cavity nominally constant; or

varying slope efficiency with applied bias to one of the electro-optic modulator cavities while current bias applied to a primary VCSEL cavity is modulated to minimize ringing in a modulated signal emitted from the VCSEL.

30. A VCSEL comprising:

an electro-optic modulator between a lasing active region and a light emitting surface, the electro-optic modulator comprising:

an electro-optically active region;

a modulator mirror region over the electro-optically active region;

at least one insulator region located in the modulator mirror region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity, wherein the electro-optic modulator is configured for:

modulating bias on one of the electro-optic modulator cavities to change the refractive index of the one electro-optic modulator cavity;

varying slope efficiency with applied bias to one of the electro-optic cavities while the absorption of the one electro-optic cavity is modulated by the same bias to add to the modulation of the transmitted light, but keep the reflection back into the primary laser cavity constant.