Organic light emitting device and method for manufacturing the same

1. An organic light emitting device (OLED), comprising:

a first electrode on a substrate, the first electrode having a pattern of a plurality of cells, with each cell defined with an emitting area and a non-emitting area;

a short-circuit preventing layer on the first electrode, the short-circuit preventing layer contacting at least a portion of the first electrode;

an auxiliary electrode on the short-circuit preventing layer in the non-emitting area of each cell;

a second electrode on the auxiliary electrode; and

an organic layer between the first electrode and the second electrode,

wherein an aperture ratio of each cell is 30% or more, and

wherein, at a current density of any one value of 1 mA/cm 2 to 5 mA/cm 2 , the short-circuit preventing layer has a thickness direction resistance value at which an operating voltage increase rate of the following Equation 1 and a numerical value of leakage current to operating current of the following Equation 2 simultaneously satisfy 0.03 or less:

V

t

-

V

o

V

o

[

Equation

⁢

⁢

1

]

I

s

I

t

[

Equation

⁢

⁢

2

]

where V t (V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is applied and in which a short-circuit defect is absent,

V o (V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is not applied and in which the short-circuit defect is absent,

I t (mA) denotes an operating current of the OLED having the same organic structure to which the short-circuit preventing layer is applied and in which the short-circuit defect is absent, and

I s (mA) denotes a leakage current in a defect area of the OLED to which the short-circuit preventing layer is applied and in which the short-circuit defect is present.

2. The OLED of claim 1 , wherein a current of the OLED flows in a direction of the auxiliary electrode, the short-circuit preventing layer, the first electrode, the organic layer, and the second electrode, or in a reverse direction thereof.

3. The OLED of claim 1 , wherein the short-circuit preventing layer contacts a top surface of the first electrode in each cell.

4. The OLED of claim 3 , wherein the auxiliary electrode contacts at least a portion of the short-circuit preventing layer, and the auxiliary electrode is separated from the first electrode in each cell.

5. The OLED of claim 3 , wherein the auxiliary electrode contacts a top surface of the short-circuit preventing layer in each cell.

6. The OLED of claim 1 , wherein a thickness of the light emitting area and a thickness of the non-emitting area are different from each other.

7. The OLED of claim 1 , wherein an insulating layer is additionally provided between the short-circuit preventing layer and the organic layer, and between the auxiliary electrode and the organic layer; or an insulating layer is additionally provided between the short-circuit preventing layer and the second electrode, and between the auxiliary electrode and the second electrode.

8. The OLED of claim 1 , wherein the short-circuit preventing layer and the auxiliary electrode are provided in the non-emitting area.

9. The OLED of claim 1 , wherein a portion of the organic layer contacts the first electrode in each cell.

10. The OLED of claim 1 , wherein a thickness of the short-circuit preventing layer is from 1 nm to 10 μm.

11. The OLED of claim 1 , wherein a volume resistivity of the short-circuit preventing layer is from 0.63 Ωcm to 8.1×10 10 Ωcm.

12. The OLED of claim 1 , wherein the short-circuit preventing layer includes one or more selected from a group consisting of a carbon powder; a carbon film; a conductive polymer; an organic polymer; a metal; a metal oxide; an inorganic oxide; a metal sulfide; and an insulating material.

13. The OLED of claim 1 , wherein a resistance in a thickness direction of the short-circuit preventing layer in one of the plurality of cells is from 70Ω to 300,000Ω.

14. The OLED of claim 1 , wherein a resistance from one cell to another cell of the plurality of cells is from 140Ω to 600,000Ω.

15. The OLED of claim 1 , wherein a surface resistance of the auxiliary electrode is 3Ω/□ or less.

16. The OLED of claim 1 , wherein the first electrode is a transparent electrode.

17. The OLED of claim 1 , wherein the auxiliary electrode includes a metal.

18. The OLED of claim 1 , wherein the organic layer includes at least one light emitting layer, and further includes one or more selected from a group consisting of a hole injecting layer; a hole transporting layer; a hole preventing layer; a charge generating layer; an electron preventing layer; an electron transporting layer; and an electron injecting layer.

19. The OLED of claim 1 , wherein the OLED is sealed with an encapsulating layer.

20. The OLED of claim 1 , wherein the OLED emits a white light having a color temperature of 2,000 K to 12,000 K.

21. The OLED of claim 1 , further comprising:

a light scattering layer between the substrate and the first electrode.

22. The OLED of claim 21 , wherein the light scattering layer includes a flattening layer.

23. The OLED of claim 1 , further comprising:

a light scattering layer on a surface facing a surface on which the first electrode of the substrate is provided.

24. The OLED of claim 1 , wherein the OLED is a flexible OLED.

25. The OLED of claim 1 , wherein the OLED is a display device or a lighting device.

26. The OLED of claim 1 , wherein an aperture ratio of the short-circuit preventing layer and the auxiliary electrode in each cell is 30% or more.

27. A method for manufacturing an organic light emitting device (OLED), the method comprising:

forming a first electrode on a substrate, the first electrode having a pattern of a plurality of cells, with each cell defined with an emitting area and a non-emitting area;

forming a short-circuit preventing layer on the first electrode, the short-circuit preventing layer contacting at least a portion of the first electrode;

forming an auxiliary electrode layer on the short-circuit preventing layer in the non-emitting area of each cell;

forming an organic layer directly on the first electrode; and

forming a second electrode on the organic layer and the auxiliary electrode layer,

wherein, at a current density of any one value of 1 mA/cm 2 to 5 mA/cm 2 , the short-circuit preventing layer has a thickness direction resistance value at which an operating voltage increase rate of the following Equation 1 and a numerical value of leakage current to operating current of the following Equation 2 simultaneously satisfy 0.03 or less:

V

t

-

V

o

V

o

[

Equation

⁢

⁢

1

]

I

s

I

t

[

Equation

⁢

⁢

2

]

where V t (V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is applied and in which a short-circuit defect is absent,

V o (V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is not applied and in which the short-circuit defect is absent,

I t (mA) denotes an operating current of the OLED having the same organic structure to which the short-circuit preventing layer is applied and in which the short-circuit defect is absent, and

I s (mA) denotes a leakage current in a defect area of the OLED to which the short-circuit preventing layer is applied and in which the short-circuit defect is present.

28. The method of claim 27 , wherein the forming of the short-circuit preventing layer and the forming of the auxiliary electrode layer comprises:

forming the short-circuit preventing layer as a whole surface layer;

forming the auxiliary electrode layer as a whole surface layer; and

simultaneously patterning the short-circuit preventing layer and the auxiliary electrode layer formed as the whole surface layer.

29. The method of claim 27 , further comprising:

forming an insulating layer on the short-circuit preventing layer and the auxiliary electrode.

30. The method of claim 27 , further comprising:

forming an encapsulation layer on the second electrode.