Method of manufacturing semiconductor device
A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.
1. A method of manufacturing a semiconductor device comprising:
(a) preparing a lead frame having a chip mounting portion over which a semiconductor chip is mounted, a suspension lead having a first portion connected to the chip mounting portion and a second portion located outside the first portion, and a plurality of leads disposed around the chip mounting portion, wherein a thickness of the first portion of the suspension lead is less than a thickness of the second portion of the suspension lead;
(b) disposing the lead frame on a die surface of a resin molding die having a first molding die and a second molding die such that the semiconductor chip is located in a cavity formed in the first molding die,
wherein the first molding die supports the first portion of the suspension lead, and
wherein each of the first and second molding dies supports the second portion of the suspension lead; and
(c) forming a sealing body resin-sealing the semiconductor chip by injecting a resin into the cavity from between the suspension lead and one of the plurality of leads that is closest to the suspension lead, the sealing body being formed such that a reverse surface of the first portion of the suspension lead is covered by the sealing body and a reverse surface of each of the plurality of leads is exposed from the sealing body.
2. A method of manufacturing the semiconductor device according to claim 1 , wherein, in the step (c), the resin is injected from a pore space bounded by the first and second molding dies, the suspension lead and the one lead.
3. A method of manufacturing the semiconductor device according to claim 2 , wherein the pore space is formed at a side of the suspension lead.
4. A method of manufacturing the semiconductor device according to claim 2 , wherein a height of the pore space is same as a thickness of a thickest part of the one lead.
5. A method of manufacturing the semiconductor device according to claim 1 , wherein, in the step (c), a portion of the resin is injected into the cavity after passing through a space bounded by the reverse surface of the first portion of the suspension lead.
6. A method of manufacturing the semiconductor device according to claim 1 , wherein, in the step (b), each of the plurality of leads is supported by the first and second molding dies such that the reverse surface of each of the plurality of leads is in contact with a film sheet disposed on the die surface of the second molding die.
7. A method of manufacturing the semiconductor device according to claim 6 , wherein, after the step (c), the reverse surface of each of the plurality of leads is projected from the sealing body.
8. A method of manufacturing the semiconductor device according to claim 1 ,
wherein the chip mounting portion has a first portion and a second portion having a thickness greater than a thickness of the first portion of the chip mounting portion, and
wherein, in the step (b), each of the plurality of leads is supported by the first and second molding dies such that the second portion of the chip mounting portion is in contact with a film sheet disposed on the die surface of the second molding die.
9. A method of manufacturing the semiconductor device according to claim 8 , wherein, after the step (c), a part of the second portion of the chip mounting portion is projected from the sealing body.
10. A method of manufacturing the semiconductor device according to claim 1 , further comprising:
(d) after the step (c), cutting the suspension lead in a state that a cutting die supports a part of the sealing body formed at the reverse surface of the first portion of the suspension lead.
11. A method of manufacturing the semiconductor device according to claim 10 , wherein, in the step (d), an area of the cutting die which supports the sealing body is greater than a cutting area of the suspension lead.
12. A method of manufacturing the semiconductor device according to claim 10 , further comprising:
(e) after the step (c) and before the step (d), cutting the plurality of leads by moving a first cutting punch of the cutting die from a bottom surface side toward a top surface side of the sealing body.
13. A method of manufacturing the semiconductor device according to claim 10 , wherein, in the step (d), the first portion of the suspension lead is cut by moving a second cutting punch of the cutting die from a top surface side toward a bottom surface side of the sealing body.
14. A method of manufacturing the semiconductor device according to claim 1 , wherein, the reverse surface of the first portion of the suspension lead is half-etched.
15. A method of manufacturing the semiconductor device according to claim 1 , further comprising:
(f) after the step (a) and before the step (b), electrically connecting a plurality of pads formed on the semiconductor chip to the plurality of leads via a plurality of wires, respectively.
16. A method of manufacturing the semiconductor device according to claim 1 , wherein, in the step (b), the first molding die supports respective obverse surfaces of the first portion and the second portion of the suspension lead.
17. A method of manufacturing the semiconductor device according to claim 16 , wherein the obverse surface of the first portion of the suspension lead and the obverse surface of the second portion of the suspension lead are disposed at a same height.
18. A method of manufacturing the semiconductor device according to claim 1 , wherein the thickness of the first portion of the suspension lead is less than a thickness of each of the plurality of leads.