IP Library Patent Application 14705977
Patent Application
App. No. 14/705,977

LIGHT EMITTING DEVICE

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Quick Facts
Patent No.
US None
App. No.
14/705,977
Abstract

A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Claims (133)

1 . A light emitting device, comprising:

a light emitting unit, comprising

a substrate;

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer;

a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer and the light transmissive layer at least exposes the first electrode and the second electrode; and

an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer, and respectively cover at least a part of an upper surface of the encapsulant.

2 . The light emitting device as claimed in claim 1 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant.

3 . The light emitting device as claimed in claim 2 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant.

4 . The light emitting device as claimed in claim 1 , further comprising:

one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.

5 . The light emitting device as claimed in claim 2 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant.

6 . The light emitting device as claimed in claim 2 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion.

7 . The light emitting device as claimed in claim 2 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other.

8 . The light emitting device as claimed in claim 7 , wherein the first sub-electrodes of the first electrode extending portion are located in at least one corner away from the second electrode on the upper surface of the encapsulant, and the second sub-electrodes of the second electrode extending portion are located in at least one corner away from the first electrode on the upper surface of the encapsulant.

9 . The light emitting device as claimed in claim 2 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant.

10 . The light emitting device as claimed in claim 9 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof.

11 . The light emitting device as claimed in claim 2 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant.

12 . The light emitting device as claimed in claim 11 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof.

13 . The light emitting device as claimed in claim 1 , further comprising:

a reflection layer, disposed on the upper surface of the encapsulant.

14 . The light emitting device as claimed in claim 13 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant.

15 . The light emitting device as claimed in claim 13 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

16 . The light emitting device as claimed in claim 1 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

17 . The light emitting device as claimed in claim 16 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

18 . The light emitting device as claimed in claim 16 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

19 . A light emitting device, comprising:

a light emitting unit, comprising:

a substrate,

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer opposite to the substrate;

a light transmissive layer, disposed on the light emitting unit and located at one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode; and

an encapsulant, located between the light emitting unit and the light transmissive layer, and encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer, and respectively cover at least a part of an upper surface of the encapsulant.

20 . The light emitting device as claimed in claim 19 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant.

21 . The light emitting device as claimed in claim 20 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant.

22 . The light emitting device as claimed in claim 19 , further comprising:

one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.

23 . The light emitting device as claimed in claim 20 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant.

24 . The light emitting device as claimed in claim 20 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion.

25 . The light emitting device as claimed in claim 20 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other.

26 . The light emitting device as claimed in claim 20 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant.

27 . The light emitting device as claimed in claim 26 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof.

28 . The light emitting device as claimed in claim 20 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant.

29 . The light emitting device as claimed in claim 28 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof.

30 . The light emitting device as claimed in claim 19 , further comprising:

a reflection layer, disposed on the upper surface of the encapsulant.

31 . The light emitting device as claimed in claim 30 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant.

32 . The light emitting device as claimed in claim 30 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

33 . The light emitting device as claimed in claim 19 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

34 . The light emitting device as claimed in claim 33 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

35 . The light emitting device as claimed in claim 33 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

36 . A light emitting device, comprising:

a light emitting unit, comprising:

a substrate,

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer;

an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant.

37 . The light emitting device as claimed in claim 36 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant.

38 . The light emitting device as claimed in claim 37 , wherein the first electrode extending portion comprises a plurality of first sub-electrodes separated from each other, and the second electrode extending portion comprises a plurality of second sub-electrodes separated from each other.

39 . The light emitting device as claimed in claim 36 , wherein the encapsulant has one or a plurality of flat surfaces.

40 . The light emitting device as claimed in claim 36 , further comprising:

a reflection layer, at least disposed on a part of the upper surface of the encapsulant.

41 . The light emitting device as claimed in claim 40 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

42 . The light emitting device as claimed in claim 36 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

43 . The light emitting device as claimed in claim 42 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

44 . The light emitting device as claimed in claim 42 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

45 . A light emitting device, comprising:

a light emitting unit, comprising:

a substrate,

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer; and

an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer and respectively cover at least a part of an upper surface of the encapsulant.

46 . The light emitting device as claimed in claim 45 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant.

47 . The light emitting device as claimed in claim 46 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant.

48 . The light emitting device as claimed in claim 45 , wherein the encapsulant has one or a plurality of flat surfaces.

49 . The light emitting device as claimed in claim 46 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant.

50 . The light emitting device as claimed in claim 46 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion.

51 . The light emitting device as claimed in claim 46 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other.

52 . The light emitting device as claimed in claim 46 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant.

53 . The light emitting device as claimed in claim 52 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof.

54 . The light emitting device as claimed in claim 46 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant.

55 . The light emitting device as claimed in claim 54 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof.

56 . The light emitting device as claimed in claim 45 , further comprising:

a reflection layer, disposed on the upper surface of the encapsulant.

57 . The light emitting device as claimed in claim 56 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant.

58 . The light emitting device as claimed in claim 56 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

59 . The light emitting device as claimed in claim 45 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

60 . The light emitting device as claimed in claim 59 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

61 . The light emitting device as claimed in claim 59 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

62 . A light emitting device, comprising:

a light emitting unit, comprising:

a substrate;

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer;

a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer and at least exposes the first electrode and the second electrode; and

an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant.

63 . The light emitting device as claimed in claim 62 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant.

64 . The light emitting device as claimed in claim 63 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant.

65 . The light emitting device as claimed in claim 62 , further comprising:

one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.

66 . The light emitting device as claimed in claim 63 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other.

67 . The light emitting device as claimed in claim 66 , wherein the first sub-electrodes and the second sub-electrodes are laminar electrodes, spherical electrodes, or grating type electrodes.

68 . The light emitting device as claimed in claim 62 , further comprising:

a reflection layer, at least disposed on a part of the upper surface of the encapsulant.

69 . The light emitting device as claimed in claim 68 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

70 . The light emitting device as claimed in claim 62 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

71 . The light emitting device as claimed in claim 70 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

72 . The light emitting device as claimed in claim 70 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

73 . A light emitting device, comprising:

a light emitting unit, comprising:

a substrate;

an epitaxial structure layer, disposed on the substrate; and

a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer opposite to the substrate;

a light transmissive layer, disposed on the light emitting unit and located at one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode; and

an encapsulant, located between the light emitting unit and the light transmissive layer, and encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant.

74 . The light emitting device as claimed in claim 73 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant.

75 . The light emitting device as claimed in claim 74 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant.

76 . The light emitting device as claimed in claim 73 , further comprising:

one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.

77 . The light emitting device as claimed in claim 74 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other.

78 . The light emitting device as claimed in claim 77 , wherein the first sub-electrodes and the second sub-electrodes are laminar electrodes, spherical electrodes, or grating type electrodes.

79 . The light emitting device as claimed in claim 73 , further comprising:

a reflection layer, at least disposed on a part of the upper surface of the encapsulant.

80 . The light emitting device as claimed in claim 79 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof.

81 . The light emitting device as claimed in claim 73 , further comprising:

a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.

82 . The light emitting device as claimed in claim 81 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material.

83 . The light emitting device as claimed in claim 81 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2015
From: TING, SHAO-YING; HUANG, KUAN-CHIEH; HUANG, JING-EN; LIN, YU-FENG; HUANG, YI-RU
To: GENESIS PHOTONICS INC.
Reel/Frame 035622/0758 →