IP Library Granted Patent US 10,232,493
Granted Patent B2
US 10,232,493 · App. 14/707,289 · Granted Mar 19, 2019

Polycrystalline diamond cutting elements having non-catalyst material additions

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,232,493
App. No.
14/707,289
Granted
Mar 19, 2019
Kind
B2
Abstract

Polycrystalline diamond cutting elements having enhanced thermal stability, drill bits incorporating the same, and methods of making the same are disclosed herein. In one embodiment, a cutting element includes a substrate having a metal carbide and a polycrystalline diamond body bonded to the substrate. The polycrystalline diamond body includes a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds and a plurality of interstitial regions positioned between adjacent diamond grains. At least a portion of the plurality of interstitial regions comprise a non-catalyst material, a catalyst material, metal carbide, or combinations thereof. At least a portion of the plurality of interstitial regions comprise non-catalyst material that coats portions of the adjacent diamond grains such that the non-catalyst material reduces contact between the diamond and the catalyst.

Claims (49)

1. A cutting element, comprising:

a substrate comprising a metal carbide; and

a polycrystalline diamond body bonded to the substrate, the polycrystalline diamond body comprising a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds and a plurality of interstitial regions positioned between adjacent diamond grains,

wherein at least a portion of the plurality of interstitial regions comprises a non-catalyst material having more than 0.1 wt % lead and having less than about 10 wt. % lead, which coats portions of the adjacent diamond and reduces contact between the diamond and a catalyst.

2. The cutting element of claim 1 , wherein at least a portion of the plurality of interstitial regions are substantially free of non-catalyst material and catalyst material.

3. The cutting element of claim 2 , wherein the portion of the plurality of interstitial regions that are substantially free of non-catalyst material and catalyst material are subject to a leaching process.

4. The cutting element of claim 1 , wherein portions of the catalyst material that is positioned within the interstitial regions are spaced apart from the diamond grains by the non-catalyst material.

5. The cutting element of claim 1 , wherein the diamond grains have higher wettability with the catalyst material than the non-catalyst material when both are molten.

6. The cutting element of claim 1 , wherein when the non-catalyst material and the catalyst material are held at a temperature above the melting or liquid temperature of the catalyst material, the non-catalyst material has a lower viscosity than the catalyst material.

7. The cutting element of claim 1 wherein the plurality of interstitial regions comprises a non-catalyst material having more than 0.1 wt % lead and having less than 3.0 wt % of lead.

8. The cutting element of claim 1 wherein the plurality of interstitial regions comprises a non-catalyst material having more than 0.1 wt % lead and having less than 1.0 wt % of lead.

9. The cutting element of claim 1 wherein the plurality of interstitial regions comprises a non-catalyst material having more than about 1.0 wt % of lead and less than about 3.0 wt % of lead.

10. A polycrystalline diamond volume comprising:

a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds forming a continuous diamond matrix and a plurality of interstitial regions positioned between adjacent diamond grains and forming a continuous interstitial matrix,

wherein at least a portion of the continuous interstitial matrix comprises a catalyst material that is separated from the diamond grains by a non-catalyst material,

wherein the non-catalyst material has more than 0.1 wt % lead and has less than about 10 wt. % lead, and

wherein the non-catalyst material coats portions of the diamond grains such that the non-catalyst material reduces contact between the diamond grains and the catalyst material.

11. The cutting element of claim 10 , wherein at least a portion of the plurality of interstitial regions are substantially free of the non-catalyst material and the catalyst material.

12. The cutting element of claim 11 , wherein the portion of the plurality of interstitial regions that are substantially free of the non-catalyst material and the catalyst material were subjected to a leaching process.

13. The cutting element of claim 10 , wherein the diamond grains have higher wettability with the catalyst material than the non-catalyst material when both are molten.

14. A cutting element comprising:

a substrate comprising a metal carbide; and

a polycrystalline diamond body bonded to the substrate, the polycrystalline diamond body comprising a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds forming a continuous diamond matrix and a plurality of interstitial regions positioned between adjacent diamond grains and forming a continuous interstitial matrix,

wherein at least a portion of the continuous interstitial matrix comprises a catalyst material that is separated from the diamond grains by a non-catalyst material,

wherein the non-catalyst material has more than 0.1 wt % lead and has less than about 10 wt. % lead, and

wherein the non-catalyst material coats portions of the diamond grains such that the non-catalyst material reduces contact between the diamond grains and the catalyst material.

15. A method of forming a cutting element, comprising:

assembling a reaction cell comprising a plurality of diamond particles, a non-catalyst material having more than 0.1 wt % lead and less than about 10 wt % lead, a catalyst material, and a substrate within a refractory metal container; and

subjecting the reaction cell and its contents to a high pressure high temperature sintering process to form a continuous diamond volume in which:

the diamond particles are compacted into a densified unbonded diamond region in which at least some of the diamond particles are separated by interstitial regions;

the non-catalyst material is melted and is present in a liquid state in at least some of the interstitial regions between diamond particles; and

the catalyst material is melted and is present in at least some of the interstitial regions between the individual diamond grains, wherein the catalyst material promotes formation of diamond-to-diamond bonds between adjacent diamond particles,

wherein the non-catalyst material coats surfaces of at least a portion of the plurality of diamond particles after the high pressure high temperature sintering operation is completed such that the non-catalyst material reduces contact between the diamond grains and the catalyst material.

16. The method of claim 15 , wherein the catalyst material is swept through at least a portion of the plurality of unbonded diamond particles while molten and displaces a portion of the non-catalyst material from the interstitial regions between diamond particles.

17. The method of claim 15 , wherein the non-catalyst material is swept through at least a portion of the plurality of unbonded diamond particles while molten.

18. The method of claim 15 , wherein the non-catalyst material is mixed with the diamond particles prior to the step of compaction of the diamond particles.

19. The method of claim 15 , wherein the volume of non-catalyst material introduced to the diamond particles is less than a volume of interstitial regions between diamond particles.

20. The method of claim 15 , wherein when the non-catalyst material and the catalyst material are held at a temperature above the melting or liquid temperature of the catalyst material, the non-catalyst material has a lower viscosity than the catalyst material.

21. The method of claim 15 , further comprising subjecting the diamond volume to a leaching process in which a leaching agent removes at least portions of the catalyst material and non-catalyst material from the interstitial regions of the diamond volume.

22. The method of claim 15 , wherein the diamond grains have higher wettability with the catalyst material than the non-catalyst material when both are molten.

23. A drill bit comprising:

a material removal portion having a plurality of shanks, the material removal portion having an axis of rotation that is relative to a base portion; and

at least one cutting element that is bonded to the material removal portion at one of the plurality of shanks, the cutting elements comprising:

a substrate comprising a metal carbide; and

a polycrystalline diamond body bonded to the substrate, the polycrystalline diamond body comprising a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds and a plurality of interstitial regions positioned between adjacent diamond grains,

wherein at least a portion of the plurality of interstitial regions comprise non-catalyst material having more than 0.1 wt % lead and less than about 10 wt. % lead, which coats portions of the adjacent grains and reduces contact between the diamond and a catalyst material.

24. The cutting element of claim 23 wherein the plurality of interstitial regions comprises a non-catalyst material having more than 0.1 wt % lead and having less than 3.0 wt % of lead.

25. The cutting element of claim 23 wherein the plurality of interstitial regions comprises a non-catalyst material having more than 0.1 wt % lead and having less than 1.0 wt % of lead.

26. The cutting element of claim 23 wherein the plurality of interstitial regions comprises a non-catalyst material having about 1.0 wt % of lead.

Assignments (6)
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: LONG, CHRISTOPHER ALLEN; GLEDHILL, ANDREW
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 035596/0014 →